Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
AM1214-100 |
Click to view a larger image
| Part Number | AM1214-100 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty ... |
| Features |
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
PDISS IC VCC TJ TSTG
Power Dissipation* Device Current*
(TC ≤ 100˚C)
270 13.5 32 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.55 °C/W
*Applies only to rated RF amplifier operation
August 1992
1/3
AM1214-100
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Value Symbol Test Conditions Min. Typ. Max. Unit
BVCBO BVEBO BVCES ICES hFE
IC = 50mA IE = 10mA IC = 100mA VBE = 0V VCE = 5V
IE = 0mA IC = 0mA... |
| Document |
 AM1214-100 Data Sheet
PDF 35.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AM1214-175 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 2 | AM1214-200 |
STMicroelectronics |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
|
| 3 | AM1214-250 |
ST Microelectronics |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS |
|
| 4 | AM1214-300 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 5 | AM1214-300 |
ASI |
NPN SILICON RF POWER TRANSISTOR |
|