| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
Sensitive and standard 8A SCRs • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM/VRRM 600 and 800 V • Triggering gate current, IGT 0.2 to 15 mA Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR s |
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ST Microelectronics |
Dual N-CHANNEL Power MOSFET Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. Th |
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STMicroelectronics |
Rail-to-rail 0.9V nanopower comparator • Ultra-low current consumption: 210 nA typ. • Propagation delay: 2 µs typ. • Rail-to-rail inputs • Push-pull output • Supply operation from 0.85 V to 5.5 V • Wide temperature range: -40 to +125 °C • ESD tolerance: 8 kV HBM / 300 V MM • SMD package A |
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ST Microelectronics |
2.5V micropower shunt voltage reference ■ 2.50V typical output voltage ■ Ultra low current consumption: 40µA typ. ■ High precision @ 25°C – ±2% (standard version) – ±1% (A grade) ■ High stability when used with capacitive loads ■ Industrial temperature range: -40°C to +85°C ■ 100ppm/°C max |
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ST Microelectronics |
1.225V micropower shunt voltage reference ■ 1.225V typical output voltage ■ Ultra low operating current: 45μA maximum at 25°C ■ High precision @ 25°C – +/- 2% (standard version) – +/- 1% (A grade) – +/- 0.5% (B grade) ■ High stability when used with capacitive loads ■ Industrial temperature |
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SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor rwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V |
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ST Microelectronics |
Dual N-CHANNEL Power MOSFET Type STS8DNF3LL ■ ■ ■ VDSS 30V RDS(on) <0.020Ω ID 8A Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced S0-8 Description This application specific Power MOSFET is the second generation of STMicroelectronics |
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SamHop Microelectronics |
Dual N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) |
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STMicroelectronics |
Sensitive and standard 8A SCRs • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM/VRRM 600 and 800 V • Triggering gate current, IGT 0.2 to 15 mA Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR s |
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ST Microelectronics |
Sensitive and standard 8A SCRs • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM/VRRM 600 and 800 V • Triggering gate current, IGT 0.2 to 15 mA Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR s |
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SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor erwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V |
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ST Microelectronics |
Power MOSFET TYPE STS8C5H30L (N-Channel) STS8C5H30L (P-Channel) s s s s s s Figure 1: Package RDS(on) < 0.022 Ω < 0.055 Ω ID 8A 5A VDSS 30 V 30 V TYPICAL RDS(on) (N-Channel) = 0.018 Ω TYPICAL RDS(on) (P-Channel) = 0.045 Ω CONDUCTION LOSSES REDUCED SWITCHING LO |
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SamHop Microelectronics |
Dual N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) |
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SamHop Microelectronics |
Dual N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) |
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SamHop Microelectronics |
Dual N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID 6A R DS(ON) (m Ω) Max 20 @ VGS=4.0V 27 @ VGS=2.5V SOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE |
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STMicroelectronics |
8A SCRs Symbol IT(RMS) VDRM/VRRM IGT Value 8 600 to 1000 0.2 to 15 Unit G A A K V mA K A G A A DESCRIPTION Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8A SCR series is suitable to fit all modes of control, f |
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STMicroelectronics |
nanopower comparators • Ultra low current consumption: 250 nA typ./op. • Propagation delay: 2 µs typ. • Rail-to-rail inputs • Open-drain outputs • Supply operation from 0.9 V to 5.5 V • Wide temperature range: -40 to +125 °C • ESD tolerance: 8 kV HBM • Single version avai |
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STMicroelectronics |
nanopower comparators • Ultra low current consumption: 250 nA typ./op. • Propagation delay: 2 µs typ. • Rail-to-rail inputs • Open-drain outputs • Supply operation from 0.9 V to 5.5 V • Wide temperature range: -40 to +125 °C • ESD tolerance: 8 kV HBM • Single version avai |
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STMicroelectronics |
Sensitive and standard 8A SCRs • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM/VRRM 600 and 800 V • Triggering gate current, IGT 0.2 to 15 mA Datasheet - production data Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate tr |
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STMicroelectronics |
Sensitive and standard 8A SCRs • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM/VRRM 600 and 800 V • Triggering gate current, IGT 0.2 to 15 mA Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR s |
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