STS8216 |
Part Number | STS8216 |
Manufacturer | SamHop Microelectronics |
Description | Green Product STS8216 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 20V FEATURES Super high dense cell design for low R DS(... |
Features |
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
ID
6A
R DS(ON) (m Ω) Max
20 @ VGS=4.0V 27 @ VGS=2.5V
SOT 26 Top View
D1
D2
S1 D1/D2 S2
1 2 3
6 5 4
G1 D1/D2 G2
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit 20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C 6 4.8 24
a
Units V V A A A W W °C
Maximum Power Dissipation
1.25 0.8 -55 to 150
Operating Junction and Storage Temperature R... |
Document |
STS8216 Data Sheet
PDF 180.05KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STS8212 |
SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
2 | STS8213 |
SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
3 | STS8215 |
SamHop Microelectronics |
Dual N-Channel MOSFET | |
4 | STS8217 |
SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
5 | STS8201 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor |