| No. | Partie # | Fabricant | Description | Fiche Technique |
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ST Microelectronics |
STH15NB50FI |
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STMicroelectronics |
STH8N80FI |
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ST Microelectronics |
STH16NA40FI d Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH16NA40FI 400 400 V V V 10 7 64 70 0.56 4000 A A A W W/ o C V o o ± 30 16 10 64 180 1.44 -65 to 150 150 C C ( •) Pulse width limited by safe operating area Octob |
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ST Microelectronics |
STH12N60 |
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STMicroelectronics |
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to switching motor control application |
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STMicroelectronics |
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to switching motor control application |
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ST Microelectronics |
N-CHANNEL Power MOS MOSFET e Temperature Max. Operating Junction Temperature o o Unit STH16NA40FI 400 400 V V V 10 7 64 70 0.56 4000 A A A W W/ o C V o o ± 30 16 10 64 180 1.44 -65 to 150 150 C C ( •) Pulse width limited by safe operating area October 1998 1/6 STW16NA |
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ST Microelectronics |
STH8NA60FI ion W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH8NA60FI 600 600 ± 30 V V V 5 3.2 32 60 0.48 4000 A A A W W /o C V o o 8 5.1 32 150 1.2 -65 to 150 150 C C ( •) Pulse width limited by safe operating |
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STMicroelectronics |
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They |
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STMicroelectronics |
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They |
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ST Microelectronics |
N-CHANNEL MOS TRANSISTOR pation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Un it STH6NA80F I 800 800 ± 30 V V V 3.4 2.1 22 60 0.48 4000 A A A W W /o C V o o 5.4 3.4 22 150 1.2 -65 to 150 15 |
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ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ge Temperature Max. Operating Junction Temperature o o Value STH6N100 1000 1000 ± 20 6 3.7 24 180 1.44 -65 to 150 150 3.7 2.3 24 70 0.56 4000 Unit V V V A A A W W/o C V o o C C ( •) Pulse width limited by safe operating area December 1996 1/1 |
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ST Microelectronics |
N-CHANNEL Power MOS MOSFET TW12NA60 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (p |
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ST Microelectronics |
STH8NB90FI ge (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope |
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ST Microelectronics |
STH12N60FI |
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ST Microelectronics |
STH10NC60FI (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage ( |
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ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor |
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STMicroelectronics |
STH7NA80FI nsulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH7NA80FI 800 800 ± 30 V V V 4 2.5 26 60 0.48 4000 A A A W W /o C V o o 6.5 4 26 150 1.2 -65 to 150 150 C C ( •) Pulse width limited by safe ope |
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ST Microelectronics |
N-CHANNEL Power MOSFET Type STH260N6F6-2 STP260N6F6 ■ ■ ■ ■ VDSS 60 V 60 V RDS(on) max < 0.002 Ω < 0.003 Ω ID 180 A 120 A 3 1 3 N-channel enhancement mode 100% avalanched rated Low gate charge Very low on-resistance 2 2 H2PAK-2 TO-220 1 Application ■ Switching app |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Storage Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area October 1998 Va l u e ST W9NA60 STH9NA60F I 600 600 ± 30 6.4 9.5 46 38 38 70 160 0.56 1.28 4000 -65 to 150 150 Un it V V V A |
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