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H8NB90FI |
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| Part Number | H8NB90FI |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled wit... |
| Features |
ge (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Value STW8NB90 900 900 ±30 8 5 32 200 1.6 4 –65 to 150 150 2500 5 3 20 80 0.64 STH8NB90FI Unit V V V A A A W W/°C V/ns V °C °C ( •)Pulse width limited by safe operating area (1)ISD ≤8 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS,... |
| Document |
 H8NB90FI Data Sheet
PDF 241.64KB |
| Distributor | Stock | Price | Buy |
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