| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
ISOTOP FAST POWER MOSFET 0 3.6 -55 to 150 150 2500 Un it V V V A A A W W /o C o o C C V 1/8 ( •) Pulse width limited by safe operating area October 1998 www.DataSheet4U.com STE26NA90 THERMAL DATA R thj -case R thc-h Thermal Resistance Junction-case Thermal Resistance C |
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ST Microelectronics |
LOW VOLTAGE 4ohm SPDT SWITCH are fast switching speed (t ON=7ns, tOFF=4.5ns) and Low Power Consumption (<0.01µW Typ.). ESD immunity is higher than 1000V per Method 3015.7 of MIL-STD-883B. It’s avalable in the commercial temperature range. PIN CONNECTION AND IEC LOGIC SYMBOLS J |
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ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package uous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) o o Value 500 500 ± 2 |
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ST Microelectronics |
N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET C C 1/8 ( •) Pulse width limited by safe operating area February 1999 STE180N10 THERMAL DATA R thj-case R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With conductive Grease Applied Max Max 0.27 0.05 o o C/W C/W AVALAN |
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STMicroelectronics |
ISOTOP STripFET Power MOSFET Type VDSS RDS(on) ID STE250NS10 100 V <0.0055 Ω 220 A t(s) ■ Standard threshold drive ■ 100% avalanche tested ducDescription ProThis Power MOSFET is the latest development of STMicroelectronics unique "single feature size" testrip-based proces |
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ST Microelectronics |
LOW VOLTAGE 4ohm SPDT SWITCH are fast switching speed (t ON=7ns, tOFF=4.5ns) and Low Power Consumption (<0.01µW Typ.). ESD immunity is higher than 1000V per Method 3015.7 of MIL-STD-883B. It’s avalable in the commercial temperature range. PIN CONNECTION AND IEC LOGIC SYMBOLS J |
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ST Microelectronics |
LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE s s s s s s s HIGH SPEED: tPD = 0.3ns (MAX.) at VCC = 4.5V tPD = 0.8ns (MAX.) at VCC = 3.0V tPD = 1.2ns (MAX.) at VCC = 2.3V VERY LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=85°C LOW "ON" RESISTANCE VIN=0V: RON =7Ω (MAX.TA=85°C) atVCC =4.5V R |
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ST Microelectronics |
N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMeshII MOSFET nuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (AC-RMS) Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 53 33 212 460 |
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ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor in Isotop Package |
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ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package ulsed) Total Dissipation at Tc = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) o o Value 500 500 ± 20 36 24 144 380 3.3 -55 to 150 150 2500 Unit V V V A A A W W/o C o o C C V |
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ST Microelectronics |
N-channel 600V 0.09 Ohm 48A ISOtop Mdmesh Power MOSFET VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total |
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ST Microelectronics |
N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET POWER MOSFET Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SM |
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STMicroelectronics |
N-channel 50A - 600V - ISOTOP Very fast PowerMESTM IGBT Type STGE50NC60VD ■ ■ ■ ■ VCES 600V VCE(sat) (Max) IC @25°C @100°C 2.5V 50A High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction susceptibility Very soft ultra fast recovery antiparallel diode ISOTOP Descripti |
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STMicroelectronics |
N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESHTM IGBT Type STGE50NC60WD ■ ■ ■ ■ VCES 600V VCE(sat) (Max) IC @25°C @100°C 2.5V 50A High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction susceptibility Very soft ultra fast recovery antiparallel diode ISOTOP Descripti |
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STMicroelectronics |
ISOTOP FAST POWER MOSFET 96 450 3.6 -55 to 150 150 2500 Un it V V V A A A W W /o C o o C C V 1/8 ( •) Pulse width limited by safe operating area October 1998 www.DataSheet4U.com STE24NA100 THERMAL DATA R thj -case R thc-h Thermal Resistance Junction-case Thermal Resist |
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STMicroelectronics |
OUTLINE AND MECHANICAL DATA |
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ST Microelectronics |
N Channel Enhancement Mode Power MOS Transistor in Isotop Package |
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