STE36N50-DA |
Part Number | STE36N50-DA |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | STE36N50-DA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DA s s s s s V DSS 500 V R DS( on) < 0.14 Ω ID 36 A 4 3 s s s s s LOW GATE CHAR... |
Features |
ulsed) Total Dissipation at Tc = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS)
o o
Value 500 500 ± 20 36 24 144 380 3.3 -55 to 150 150 2500
Unit V V V A A A W W/o C
o o
C C
V
( •) Pulse width limited by safe operating area September 1994 1/9 STE36N50-DA DIODE ABSOLUTE MAXIMUM RATINGS Symbol V RRM V RS M I F(RMS ) I FRM P to t Parameter Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage RMS Forward Current Repet. Peak Forward Current (t p = 5 µ s, f = 5KHz) Total Dissipation at Tc = 25 C Derating Fact... |
Document |
STE36N50-DA Data Sheet
PDF 166.75KB |
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