STE36N50-DA ST Microelectronics N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package Datasheet, en stock, prix

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STE36N50-DA

ST Microelectronics
STE36N50-DA
STE36N50-DA STE36N50-DA
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Part Number STE36N50-DA
Manufacturer STMicroelectronics (https://www.st.com/)
Description STE36N50-DA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DA s s s s s V DSS 500 V R DS( on) < 0.14 Ω ID 36 A 4 3 s s s s s LOW GATE CHAR...
Features ulsed) Total Dissipation at Tc = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) o o Value 500 500 ± 20 36 24 144 380 3.3 -55 to 150 150 2500 Unit V V V A A A W W/o C o o C C V (
•) Pulse width limited by safe operating area September 1994 1/9 STE36N50-DA DIODE ABSOLUTE MAXIMUM RATINGS Symbol V RRM V RS M I F(RMS ) I FRM P to t Parameter Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage RMS Forward Current Repet. Peak Forward Current (t p = 5 µ s, f = 5KHz) Total Dissipation at Tc = 25 C Derating Fact...

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