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STE180NE10 |
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| Part Number | STE180NE10 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, ... |
| Features |
Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage (AC-RMS) Storage Temperature Operating Junction Temperature
Value 100 100 ± 20 180 119 540 360 2.88 2500 -55 to 150 150
Unit V V V A A A W W/°C V °C °C 1/8
( •) Pulse width limited by safe operating area. STE180NE10 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.347 °C/W AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 25 V) Max ... |
| Document |
 STE180NE10 Data Sheet
PDF 292.34KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STE180N05 |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE Power MOS Transistor |
|
| 2 | STE180N10 |
ST Microelectronics |
N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET |
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| 3 | STE180-75T2MI |
Vishay |
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| 4 | STE1000-60T4MI |
Vishay |
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| 5 | STE10000-10T4MI |
Vishay |
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