| No. | Partie # | Fabricant | Description | Fiche Technique |
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ST Microelectronics |
STP1806 Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH |
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ST Microelectronics |
N-Channel Power MOSFET Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH |
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ST Microelectronics |
Power MOSFET Order codes VDSS (@Tjmax) RDS(on) max. ID PW STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110 W ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applicatio |
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STMicroelectronics |
N-channel Power MOSFET TAB Order code STF18N65M5 STI18N65M5 STP18N65M5 STW18N65M5 ■ ■ ■ ■ VDSS @ TJmax RDS(on) max ID 3 3 12 1 2 TO-220FP 710 V < 0.22 Ω 15 A TAB I²PAK Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capability Excellent switchi |
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STMicroelectronics |
Automotive-grade 390V internally clamped IGBT • Designed for automotive applications and AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed cu |
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STMicroelectronics |
N-channel Power MOSFET TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STP18N55M5 600 V 192 mΩ 16 A • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested Applications |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STB185N55F3 STP185N55F3 VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A(1) 120A(1) Pw 330W 330W 1. Value limited by wire bonding ■ Ultra low on-resistance ■ 100% avalanche tested Description This n-channel enhancement mode Power MOSFET is the l |
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ST Microelectronics |
Trusted Platform Module (TPM) SINGLE-CHIP TRUSTED PLATFORM MODULE (TPM) I EMBEDDED TPM 1.2 FIRMWARE I FULL TPM SOLUTION WITH COMPLETE TCG COMPLIANT SOFTWARE STACK LAYERS I 33-MHz LOW PIN COUNT (LPC) INTERFACE V1.1 I COMPLIANT WITH TCG PC CLIENT SPECIFIC TPM IMPLEMENTATION SPECIFI |
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ST Microelectronics |
N-CHANNEL Power MOSFET Type STB180N55 STP180N55 ■ ■ VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A (Note 1) 120A (Note 1) 3 1 1 2 3 ULTRA LOW ON-RESISTANCE 100% AVALANCHE TESTED D²PAK TO-220 Description This N-Channel enhancement mode MOSFET is the latest refinement of ST |
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ST Microelectronics |
N-CHANNEL Power MOSFET Type STB185N55 STP185N55 VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A(1) 120A(1) 3 1 2 1. Value limited by wire bonding ■ ■ 3 1 Ultra low on-resistance 100% avalanche tested TO-220 D2PAK Description This n-channel enhancement mode Power MOSFET is th |
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STMicroelectronics |
N-channel Power MOSFET Order codes STB18NM80 STF18NM80 STP18NM80 STW18NM80 VDSS 800 V 800 V 800 V 800 V RDS(on) max < 0.295 Ω < 0.295 Ω < 0.295 Ω < 0.295 Ω ID 3 3 1 2 17 A 17 A (1) 17 A 17 A 1 D²PAK TO-220FP 1. Limited only by maximum temperature allowed 3 ■ ■ ■ 100 |
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STMicroelectronics |
N-channel Power MOSFET TAB 3 2 1 TO-220 Order code VDS RDS(on) max ID STP180NS04ZC 40 V clamped 4.2 mΩ 120 A • Low capacitance and gate charge • 100% avalanche tested • 175 °C maximum junction temperature Applications • Switching and linear applications Figure 1. I |
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STMicroelectronics |
N-channel Power MOSFET Order code STP18N60DM2 VDS 600 V RDS(on) max. 0.295 Ω ID 12 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Application |
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STMicroelectronics |
N-channel Power MOSFET Order codes STB18NM60ND STF18NM60ND STP18NM60ND STW18NM60ND VDSS @ TJmax 650 V RDS(on) max ID <0.29 Ω 13 A • The worldwide best RDS(on)* area amongst the fast recovery diode devices • 100% avalanche tested • Low input capacitance and gate charg |
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STMicroelectronics |
Automotive-grade 390V internally clamped IGBT • Designed for automotive applications and AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed cu |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes VDS @ TJmax RDS(on) max. STB18N60M2 STI18N60M2 STP18N60M2 650 V 0.280 Ω STW18N60M2 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected ID 13 A Package D²PAK I²PAK T |
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STMicroelectronics |
N-channel Power MOSFET TAB TAB 123 I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram , TAB AM15572v1 Order code STI18N65M2 STP18N65M2 VDS 650V RDS(on) max ID 0.33Ω 12 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanc |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS RDS(on) ID Pw STB180N55F3 55V ) STP180N55F3 55V 3.5mΩ 120A(1) 330W 3.8mΩ 120A(1) 330W t(s 1. Value limited by wire bonding uc ■ Ultra low on-resistance d ■ 100% avalanche tested Pro Description lete This n-channel enhancement mode |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID PTOT STP180N4F6 40 V 2.7 mΩ 120 A 190 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Power tools Description This d |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes VDSS STP180N10F3 100 V ■ Ultra low on-resistance ■ 100% avalanche tested RDS(on) max. 5.1 mΩ ID 120 A Applications ■ High current switching applications Description This device is an N-channel enhancement mode Power MOSFET produce |
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