No. | Partie # | Fabricant | Description | Fiche Technique |
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ST Microelectronics |
Ultrafast High Voltage Rectifier and benefits ● ● ● ● ● Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Package insulation voltage: 2500 VRMS Description The STTH120L04TV1 uses ST 400 V technology and is specially suited for u |
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STMicroelectronics |
MEMS digital output motion sensor Wide supply voltage, 1.71 V to 3.6 V Independent IO supply (1.8 V) and supply voltage compatible Ultra-low power consumption down to 2 μA 2g/±4g/8g/16g selectable full scales I2C/SPI digital output interface 2 independent programmable |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 µs minimum short circuit withstand time at TJ=150 °C • Tight parameters distribution • Safe paralleling • Low |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 μs minimum short circuit withstand time at TJ = 150 °C • Safe paralleling • Low thermal resistance • Very fas |
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STMicroelectronics |
power Schottky silicon carbide diode • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -40 °C to 175 °C • ECOPACK2 compliant component Applications • Solar inverter • Boost PFC • Air conditioning equ |
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ST Microelectronics |
STH12N60 |
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STMicroelectronics |
Ultrafast recovery - 1200 V diode and benefits ■ ■ ■ ■ ■ ■ Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature Insulated package: Electrical insulation = 2500 |
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STMicroelectronics |
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER AND BENEFITS s Ultrafast switching s Low reverse recovery current s Reduces switching losses s Low thermal resistance DESCRIPTION The STTH12R06D/FP, which is using ST Turbo 2 600V technology, is specially suited as boost diode in continuous mode pow |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 μs minimum short circuit withstand time at TJ = 150 °C • Safe paralleling • Low thermal resistance • Very fas |
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STMicroelectronics |
power Schottky silicon carbide diode • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating from -40 °C to 175 °C • Low VF • ECOPACK®2 compliant Description The SiC diode, available in TO-220AC, DPAK HV, D²PAK and |
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STMicroelectronics |
Automotive grade 1200V power Schottky silicon carbide diode |
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ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 1/7 January 1999 BUH1215 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO V CEO(sus) V EBO V CE(sat )∗ V BE(s at)∗ h F E∗ Paramete |
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ST Microelectronics |
VERY FAST CMOS 512/1K/2K x9BiPORT FIFO |
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ST Microelectronics |
N-CHANNEL Power MOS MOSFET TW12NA60 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (p |
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ST Microelectronics |
STH12N60FI |
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ST Microelectronics |
Power MOSFET Type STRH12P10ESY3 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ www.DataSheet4U.com VDSS 100V Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Hea |
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STMicroelectronics |
Ultrafast recovery - high voltage diode and benefits ■ ■ ■ ■ ■ ■ Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature Insulated packages: – TO-220Ins Electrical insul |
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STMicroelectronics |
Automotive ultrafast recovery - high voltage diode ■ ■ ■ ■ ■ ■ AEC-Q101 qualified Ultrafast, soft recovery Very low conduction and switching losses High frequency and high pulsed current operation High reverse voltage capability High junction temperature A K A K TO-220AC STTH1210DY Description T |
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STMicroelectronics |
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER AND BENEFITS s Ultrafast switching s Low reverse recovery current s Reduces switching losses s Low thermal resistance DESCRIPTION The STTH12R06D/FP, which is using ST Turbo 2 600V technology, is specially suited as boost diode in continuous mode pow |
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STMicroelectronics |
STH12NA60 te-source Voltage ID Drain Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM( •) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temper |
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