| No. | Partie # | Fabricant | Description | Fiche Technique |
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ST Microelectronics |
STGW45HF60WD ■ ■ ■ Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Ultra fast soft recovery antiparallel diode 3 Applications 2 ■ ■ ■ Welding High frequency converters Power factor correction TO-247 1 Descript |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coeffic |
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STMicroelectronics |
1200V short circuit rugged IGBT ■ ■ ■ ■ ■ Low on-losses High current capability Low gate charge Short circuit withstand time 10 µs IGBT co-packaged with Ultrafast free-wheeling diode 1 2 3 Applications ■ TO-247 Motor control Description This high voltage and short-circuit rugg |
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STMicroelectronics |
STGW40N120KD ■ ■ ■ ■ ■ Low on-losses High current capability Low gate charge Short circuit withstand time 10 µs IGBT co-packaged with Ultrafast free-wheeling diode 1 2 3 Applications ■ TO-247 Motor control Description This high voltage and short-circuit rugg |
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STMicroelectronics |
40A - 600V - short circuit rugged IGBT • Low on-voltage drop (VCE(sat)) • Low Cres / Cies ratio (no cross conduction susceptibility) • Short-circuit withstand time 10 µs 2 1 3 • IGBT co-packaged with ultra fast free-wheeling diode TO-247 Applications • High frequency inverters • Motor |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.8 V (typ.) @ IC = 40 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode G(1) E(3) NG1E3C2T |
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STMicroelectronics |
Trench gate field-stop IGBT • 10 µs of short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 40 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and fast recovery antiparallel diode Applications • Industrial drives • UPS • Solar • We |
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STMicroelectronics |
IGBT TO247-4 2 34 1 C(1, TAB) • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A • Tight parameter distribution • Safe paralleling • Positive |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.8 V (typ.) @ IC = 40 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Welding • Power factor correction • UPS • Solar inv |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A • Safe paralleling • Tight parameter distribution • Low thermal resistance Applicatio |
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STMicroelectronics |
IGBT ■ Improved Eoff at elevated temperature ■ Low VF soft recovery antiparallel diode Applications ■ Welding ■ Induction heating ■ Resonant converters Description The STGW45HF60WDI is based on a new advanced planar technology concept to yield an IGBT wit |
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ST Microelectronics |
N-CHANNEL IGBT ter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperatur |
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ST Microelectronics |
N-CHANNEL IGBT Type STGW40NC60WD ■ ■ ■ VCES 600V IC VCE(sat) (Max)@ 25°C @100°C <2.5V 40A Low CRES / CIES ratio (no cross conduction susceptibility) High frequency operation Very soft ultra fast recovery anti parallel diode TO-247 Description Using the latest h |
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ST Microelectronics |
Very Fast IGBT ■ ■ Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode 3 Applications ■ ■ ■ ■ 2 1 High frequency inverters UPS Motor drivers Induction heating TO-247 long leads Description This IGBT |
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STMicroelectronics |
N-CHANNEL IGBT TYPE STGW40NC60V s s Figure 1: Package IC @100°C 50 A VCES 600 V VCE(sat) (Max) @25°C < 2.5 V s s s s HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY ENERGY OFF LOSSES INCLUDE TAIL CURRENT LOWER CRES |
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STMicroelectronics |
40A - 600V - short circuit rugged IGBT • Low on-voltage drop (VCE(sat)) • Low Cres / Cies ratio (no cross conduction susceptibility) • Short-circuit withstand time 10 µs 2 1 3 • IGBT co-packaged with ultra fast free-wheeling diode TO-247 Applications • High frequency inverters • Motor |
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STMicroelectronics |
Trench gate field-stop IGBT 72 72ORQJOHDGV Figure 1.Internal schematic diagram • 10 µs of short-circuit withstand time • VCE(sat) = 1.85 V (typ.) @ IC = 40 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and fast recovery |
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STMicroelectronics |
Trench gate field-stop IGBT Maximum junction temperature: TJ = 175 °C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 μs minimum short circuit withstand time at TJ=150 °C Safe paralleling Very fast recovery antiparallel dio |
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ST Microelectronics |
ultra fast IGB ■ ■ ■ Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Ultra fast soft recovery antiparallel diode 3 Applications 2 ■ ■ ■ ■ Welding Induction heating High frequency converters Power factor correction |
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