| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sangdest Microelectronics |
SCHOTTKY BARRIER DIODE • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • Low forward voltage drop • High surge capability • For use in low voltage, high frequency inver |
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Sangdest Microelectronics |
SCHOTTKY BARRIER DIODE • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • Low forward voltage drop • High surge capability • For use in low voltage, high frequency inver |
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STMicroelectronics |
LOW DROP POWER SCHOTTKY RECTIFIER AND BENEFITS n VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n EXTREMELY FAST SWITCHING n LOW FORWARD VOLTAGE DROP n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE τ Tamb = 25°C Tamb = 25°C Test Conditions VR = 0V IF = 5mA f = 1MHz Krakauer Method Min. Typ. Max. 2 100 Unit pF ps * On infinite heatsink with 4mm lead length ** Pulse test: tp ≤ 300µs δ < 2%. Matched batches available on request. Test conditions |
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ST Microelectronics |
Aerospace 40V power Schottky rectifier • Low forward voltage drop • Very small conduction losses • Ultrafast switchings with negligible losses • High thermal conductivity materials • Surface mount hermetic package • Radiation performance – 150 krad (Si) low dose rate – 3 Mrad (Si) high do |
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ST Microelectronics |
Aerospace 2.5 A fast recovery rectifier ■ ■ ■ ■ ■ ■ ■ ■ ■ Aerospace applications Surface mount hermetic package High thermal conductivity materials Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop Package weight: 0.12 g Target radi |
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ST Microelectronics |
Aerospace 6 A fast recovery rectifier A K K ■ ■ ■ ■ ■ ■ ■ ■ ■ Aerospace applications Surface mount hermetic package High thermal conductivity materials Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop Package weight: 0.18 g Targ |
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STMicroelectronics |
Low drop power Schottky rectifier ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Avalanche capability specified A K Description DO-41 Axial Power Schottky rectifier suited for Switch Mode Power Supplies and hi |
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STMicroelectronics |
Transil ■ Peak pulse power: – 1500 W (10/1000 μs) ■ Stand off voltage: 5 V ■ Unidirectional ■ Operating Tj max: 175 °C ■ High power capability at Tj max: – 1500 W (10/1000 µs) ■ JEDEC registered package outline Complies with the following standards ■ IEC 610 |
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ST Microelectronics |
Aerospace 45V 1A Schottky diode • Low forward voltage drop: VF = 0.49 V at 1 A and +25 °C • Very small conduction losses • Ultrafast switchings with negligible losses • High thermal conductivity materials • Surface mount hermetic package • Radiation performance – 150 krad (Si) low |
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Sangdest Microelectronics |
General Purpose Rectifiers |
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Sangdest Microelectronics |
General Purpose Rectifiers |
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Sangdest Microelectronics |
General Purpose Rectifiers |
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Sangdest Microelectronics |
General Purpose Rectifiers |
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Sangdest Microelectronics |
SCHOTTKY BARRIER DIODE • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • Low forward voltage drop • High surge capability • For use in low voltage, high frequency inver |
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STMicroelectronics |
LOW DROP POWER SCHOTTKY RECTIFIER AND BENEFITS n n n n n 1A 40 V 150°C 0.45 V VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP AVALANCHE CAPABILITY SPECIFIED DO41 DESCRIPTION Axial Power Schottky rectifier suited for Switc |
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STMicroelectronics |
LOW DROP POWER SCHOTTKY RECTIFIER AND BENEFITS n VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n EXTREMELY FAST SWITCHING n LOW FORWARD VOLTAGE DROP n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high |
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STMicroelectronics |
LOW DROP POWER SCHOTTKY RECTIFIER AND BENEFITS n VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n EXTREMELY FAST SWITCHING n LOW FORWARD VOLTAGE DROP n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high |
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STMicroelectronics |
LOW DROP POWER SCHOTTKY RECTIFIER AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS @ TJmax RDS(on)max. STD11N50M2 STF11N50M2 550 V 0.53 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected ID 8A Package DPAK TO-220FP Applications • Switching a |
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