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1N5711 |
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| Part Number | 1N5711 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range... |
| Features |
τ Tamb = 25°C Tamb = 25°C Test Conditions VR = 0V IF = 5mA f = 1MHz Krakauer Method Min. Typ. Max. 2 100 Unit pF ps
* On infinite heatsink with 4mm lead length ** Pulse test: tp ≤ 300µs δ < 2%. Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
August 1999 Ed: 1A
1/3
1N 5711
Figure 1. Forward current versus forward voltage at low level (typical values). Figure 2. Capacitance C versus reverse applied voltage VR (typical values).
Figure 3. Reverse current versus ambient temperature.
Figure 4. Reverse current vers... |
| Document |
 1N5711 Data Sheet
PDF 41.79KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1N5711 |
Compensated Deuices Incorporated |
SCHOTTKY BARRIER DIODES |
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| 2 | 1N5711 |
Diodes Incorporated |
SCHOTTKY BARRIER SWITCHING DIODE |
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| 3 | 1N5711 |
Micro Commercial Components |
Schottky Barrier Switching Diode |
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| 4 | 1N5711 |
Microsemi Corporation |
SCHOTTKY BARRIER DIODES |
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| 5 | 1N5711 |
Avago |
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