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1N5818W |
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| Part Number | 1N5818W |
| Manufacturer | SangdeSTMicroelectronics (https://www.st.com/) |
| Description | Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, h... |
| Features |
• Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • Low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Mechanical Data: • Case: SOD-123FL molded plastic body • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: Color band denotes cathode end • Mounting Position: Any Mechanical Dimensions: In mm/Inches 1N5817W-1N5819W Green Products Symbol A B C D E G Millimeters ... |
| Document |
 1N5818W Data Sheet
PDF 125.40KB |
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