| No. | Partie # | Fabricant | Description | Fiche Technique |
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Samsung semiconductor |
1Mx36 & 2Mx18 Flow-Through NtRAM • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle. • T |
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Samsung semiconductor |
(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle. • T |
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Samsung semiconductor |
512K x 36/32 & 1M x 18 Flow-Through NtRAM |
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Samsung semiconductor |
512K x 36/32 & 1M x 18 Flow-Through NtRAM |
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Samsung semiconductor |
512Kx36 & 1Mx18 Flow-Through NtRAM • VDD= 2.5 or 3.3V +/- 5% Power Supply. • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle. • Three Chip Enable for simple depth expansion with no data contention . • A interleave |
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Samsung semiconductor |
512K x 36/32 & 1M x 18 Flow-Through NtRAM |
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Samsung |
Display Devices / Specifica Del Modulo LCD taSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U |
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SAMSUNG |
LCD_Module |
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Samsung Semiconductor |
(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle. • T |
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Samsung Semiconductor |
(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle. • T |
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Samsung semiconductor |
512Kx36 & 1Mx18 Flow-Through NtRAM • VDD= 2.5 or 3.3V +/- 5% Power Supply. • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle. • Three Chip Enable for simple depth expansion with no data contention . • A interleave |
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Samsung semiconductor |
1M x 36 & 2M x 18 Flow-Through NtRAM |
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Samsung semiconductor |
256Kx36 & 512Kx18-Bit Flow Through NtRAM 256Kx36 & 512Kx18 Flow-Through NtRAMTM 256Kx36 & 512Kx18-Bit Flow Through NtRAMTM GENERAL DESCRIPTION The K7M803625B and K7M801825B are 9,437,184-bit Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidt |
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Samsung semiconductor |
256Kx36 & 512Kx18-Bit Flow Through NtRAM 256Kx36 & 512Kx18 Flow-Through NtRAMTM 256Kx36 & 512Kx18-Bit Flow Through NtRAMTM GENERAL DESCRIPTION The K7M803625B and K7M801825B are 9,437,184-bit Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidt |
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Samsung semiconductor |
(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle. • T |
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SAMSUNG |
LCD_Module |
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SAMSUNG |
LCD_Module |
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SAMSUNG |
LCD_Module |
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