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K7M161825M |
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| Part Number | K7M161825M |
| Manufacturer | Samsung semiconductor |
| Description | The K7M163625M and K7M161825M are 18,874,368-bits Synchronous Static SRAMs. The N tRAM TM , or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address... |
| Features |
• 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle. • Three Chip Enable for simple depth expansion with no data contention . • A interleaved burst or a linear burst mode. • Asynchronous output enable control. • Power Down mode. • TTL-Level Three-State Outputs. • 100-TQFP-1420A /119BGA(7x17 Ball Grid Array Package). GENERAL DESCRIPTION The K7M163625M and K7M161825M are 18,874,368-bits Synchronous Stati... |
| Document |
 K7M161825M Data Sheet
PDF 297.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K7M161825A |
Samsung semiconductor |
512K x 36/32 & 1M x 18 Flow-Through NtRAM |
|
| 2 | K7M161835B |
Samsung semiconductor |
512Kx36 & 1Mx18 Flow-Through NtRAM |
|
| 3 | K7M163225A |
Samsung semiconductor |
512K x 36/32 & 1M x 18 Flow-Through NtRAM |
|
| 4 | K7M163625A |
Samsung semiconductor |
512K x 36/32 & 1M x 18 Flow-Through NtRAM |
|
| 5 | K7M163625M |
Samsung semiconductor |
(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM |
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