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K7M163635B |
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| Part Number | K7M163635B |
| Manufacturer | Samsung semiconductor |
| Description | The K7M163635B and K7M161835B are 18,874,368-bits Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, d... |
| Features |
• VDD= 2.5 or 3.3V +/- 5% Power Supply. • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle. • Three Chip Enable for simple depth expansion with no data contention . • A interleaved burst or a linear burst mode. • Asynchronous output enable control. • Power Down mode. • TTL-Level Three-State Outputs. • 100-TQFP-1420A (Lead and Lead free package) • Operating in commeical and industrial temperature range. GENERAL DESCRIPTION The K7M163635B and K7M161835B are 18,874,368-bits Synchronous Static SRAMs. The NtRAMTM, or No Turnaro... |
| Document |
 K7M163635B Data Sheet
PDF 427.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K7M163625A |
Samsung semiconductor |
512K x 36/32 & 1M x 18 Flow-Through NtRAM |
|
| 2 | K7M163625M |
Samsung semiconductor |
(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM |
|
| 3 | K7M163225A |
Samsung semiconductor |
512K x 36/32 & 1M x 18 Flow-Through NtRAM |
|
| 4 | K7M161825A |
Samsung semiconductor |
512K x 36/32 & 1M x 18 Flow-Through NtRAM |
|
| 5 | K7M161825M |
Samsung semiconductor |
(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM |
|