| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
N-channel Power MOSFET Type STF3NK100Z STP3NK100Z STD3NK100Z ■ ■ ■ ■ ■ VDSS 1000V 1000V 1000V RDS(on) Max < 6Ω < 6Ω < 6Ω ID 2.5A 2.5A 2.5A PTOT 25W 90W 90W TO-220 1 2 1 3 2 3 TO-220FP Extremely high dv/dt capability 3 100% avalanche tested Gate charge minimized Ve |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR g Junction Temperature o o Value STP3N100FI 1000 1000 ± 20 3.5 2 14 100 0.8 -65 to 150 150 2 1.2 14 40 0.32 2000 Unit V V V A A A W W/o C V o o C C ( •) Pulse width limited by safe operating area December 1996 1/10 www.DataSheet.in STP3N100 |
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STMicroelectronics |
N-Channel MOSFET TAB 3 2 1 TO-220 Order code STP3NK50Z VDS RDS(on)max. ID 500 V 3.3 Ω 2.3 A • Extremely high dv/dt capability • ESD improved capability • 100% avalanche tested • Gate charge minimized • Zener-protected PTOT 45 W Figure 1. Internal schematic diag |
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STMicroelectronics |
N-CHANNEL Power MOSFET TAB TO-220 1 23 D(2, TAB) Order code VDS STP3NK80Z 800 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications RDS(on) max. 4.5 Ω ID 2.5 A • Switching applications G(1) Descriptio |
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STMicroelectronics |
N-Channel MOSFET TAB TO-220 1 23 Order code VDS RDS(on) max. ID STP3NK90Z 900 V 4.8 Ω 3A • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected D(2, TAB) Applications • Switching applications G(1) Description |
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STMicroelectronics |
STP3NA80FI P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C De |
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STMicroelectronics |
N-channel Power MOSFET TAB Order code VDS RDS(on)max. ID Package TAB t(s) 3 1 c D2PAK TO-220 1 23 Produ D(2, TAB) olete G(1) - Obs S(3) AM01475V1 roduct(s) Product status link te P STB3N62K3 Obsole STP3N62K3 STB3N62K3 STP3N62K3 620 V 2.5 Ω • 100% avalanch |
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STMicroelectronics |
N-Channel MOSFET Order code STD3NK80Z-1 STD3NK80ZT4 STF3NK80Z STP3NK80Z VDS 800 V 800 V 800 V 800 V RDS(on) max. 4.5 Ω 4.5 Ω 4.5 Ω 4.5 Ω ID 2.5 A 2.5 A 2.5 A 2.5 A Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Zener-protected |
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STMicroelectronics |
STP3NA90FI ge T emperature Tj Max Operating Junction Temperature ( •)Pulse width limited by safe operating area March 1996 Value STP3NA90 S TP3NA 90F I 900 900 ± 30 3 1.9 2 1.2 12 12 100 40 1.25 0 .3 2 - 2000 -65 to 150 150 Unit V V V A A A W W/ |
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STMicroelectronics |
STP3NA60 at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM( •) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature ( •) |
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STMicroelectronics |
N-channel Power MOSFET TAB 3 2 1 TO-220 Order code STP3NK50Z VDS RDS(on)max. ID 500 V 3.3 Ω 2.3 A • Extremely high dv/dt capability • ESD improved capability • 100% avalanche tested • Gate charge minimized • Zener-protected PTOT 45 W Figure 1. Internal schematic diag |
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STMicroelectronics |
N-Channel Power MOSFET Order code VDS RDS(on) max. ID STP3NK90ZFP 900 V 4.8 Ω 3A 3 2 1 TO-220FP D(2) • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications G(1) • Switching applications Description Thi |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS STD3N80K5 STF3N80K5 STP3N80K5 STU3N80K5 800 V RDS(on) max. 3.5 Ω ID 2.5 A PTOT 60 W 20 W 60 W Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-pr |
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STMicroelectronics |
N-Channel MOSFET Order codes VDS RDS(on) max. STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 600 V 3.6 Ω STP3NK60Z STP3NK60ZFP • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected ID 2.4 |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR g Junction Temperature o o Value STP3N100FI 1000 1000 ± 20 3.5 2 14 100 0.8 -65 to 150 150 2 1.2 14 40 0.32 2000 Unit V V V A A A W W/o C V o o C C ( •) Pulse width limited by safe operating area December 1996 1/10 www.DataSheet.in STP3N100 |
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STMicroelectronics |
STP3NA50 at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM( •) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature ( •) |
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STMicroelectronics |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT CHING AND RESONANT TOPOLOGIES s “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60K STGD3NB60KT4 STGP3NB60KD STGP3NB60KDFP STGB3NB60KDT4 MARKING GP3NB60K GD3NB60K GP3NB60KD GP3NB60KDFP GB3NB60KD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGIN |
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STMicroelectronics |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT CHING AND RESONANT TOPOLOGIES s “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60K STGD3NB60KT4 STGP3NB60KD STGP3NB60KDFP STGB3NB60KDT4 MARKING GP3NB60K GD3NB60K GP3NB60KD GP3NB60KDFP GB3NB60KD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGIN |
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S TMICROELECTRONICS |
STP3NC60FP = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insula |
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STMicroelectronics |
N-channel MOSFET Order codes VDS RDS(on) max. ID PTOT STFW3N150 63 W STH3N150-2 1500 V 9Ω STP3N150 2.5 A 140 W STW3N150 • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, cr |
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