P3NA60 |
Part Number | P3NA60 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
Features |
at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM( •) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area November 1996 3 2 1 TO-220 3 2 1 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Value STP3NA60 STP3NA60FI 600 600 ± 30 2.9 2.1 1.8 1.3 11.6 11.6 80 40 0.64 0.32 2000 -65 to 150 150 Unit V V V A A A W W/oC V oC oC 1/10 STP3NA60/FI THERMAL DATA Rthj-case Rthj-amb Rt h c- sin k Tl Thermal Re... |
Document |
P3NA60 Data Sheet
PDF 434.53KB |
Distributor | Stock | Price | Buy |
---|