P3NA50 |
Part Number | P3NA50 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
Features |
at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM( •) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area November 1996 3 2 1 TO-220 3 2 1 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Value STP3NA50 STP3NA50FI 500 500 ± 30 3.3 2.3 2.1 1.5 13.2 13.2 80 40 0.64 0.32 2000 -65 to 150 150 Unit V V V A A A W W/oC V oC oC 1/10 STP3NA50/FI THERMAL DATA Rthj-case Rthj-amb Rt h c- sin k Tl Thermal Re... |
Document |
P3NA50 Data Sheet
PDF 245.52KB |
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