| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Renesas |
N-channel MOSFET • VDSS = 30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 0.88 mΩ MAX. (VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 1.82 mΩ MAX. (VGS = 4.5 V, ID = 39 A) • 4.5 V Gate-drive available • Thin type surface mount package with heat spreader • Halogen free 8- |
|
|
|
|
Renesas |
N-Channel MOSFET a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V drive available • Low on-state resistance RDS(on)1 = 82 mΩ MAX. (VGS = 10 V, ID |
|
|
|
|
Renesas |
Dual N-CHANNEL MOSFET • 4.5 V drive available • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 2 A) RDS(on)2 = 83 mΩ MAX. (VGS = 4.5 V, ID = 2 A) • Built-in gate protection diode • Small and surface mount package (8-pin VSOF (2429)) ABSOLUTE MAXIMUM RATI |
|
|
|
|
Renesas |
N-CHANNEL MOSFET Two MOSFET circuits Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.2 MAX. (VGS = 4.5 V, ID = 50 mA) Ordering Information Part Number Lead Plating Packing Pack |
|
|
|
|
Renesas |
P-CHANNEL MOSFET a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS0990EJ0100 Rev.1.00 Dec 27, 2012 Features • –1.8V drive available • Low on-state resistance |
|
|
|
|
Renesas |
P-CHANNEL MOSFET a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS0991EJ0100 Rev.1.00 Dec 27, 2012 Features • –1.8V drive available • Low on-state resistance |
|
|
|
|
Renesas |
DUAL P-CHANNEL MOSFET a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS0834EJ0101 Rev.1.01 Apr 15, 2013 Features • –1.8V drive available • Low on-state resistance |
|
|
|
|
Renesas |
MOS FIELD EFFECT TRANSISTOR • Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 mΩ MAX. (VGS = 4.5 V, ID = 10 A) • Low Ciss: Ciss = 710 pF TYP. (VDS = 15 V, VGS = 0 V) • Small and surface mount package (Power SOP8) • RoHS Compliant Order |
|
|
|
|
Renesas |
MOS FIELD EFFECT TRANSISTOR • Low on-state resistance ⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A) ⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A) • Low Ciss 2100 pF TYP. • Built-in gate protection diode • Thin type surface mount package with heat spreader (8-pin HVSON) • |
|
|
|
|
Renesas |
P-channel MOSFEF • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 15.5 mΩ MAX. (VGS = −10 V, ID = −17 A) • 4.5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free HWSON-8 Ordering Informatio |
|
|
|
|
Renesas |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = −4.5 V, ID |
|
|
|
|
Renesas |
P-channel MOSFET • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −10 A) • 4.5 V Gate-drive available • Small and surface mount package (Power SOP8) • Pb-free and Halogen free Ordering Information Power SOP8 Part No. μ |
|
|
|
|
Renesas |
N- AND P-CHANNEL MOSFET |
|
|
|
|
Renesas |
Shunt Regulator and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other |
|
|
|
|
Renesas |
N-CHANNEL MOSFET Two MOSFET circuits Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.2 MAX. (VGS = 4.5 V, ID = 50 mA) Ordering Information Part Number Lead Plating Packing Pack |
|
|
|
|
Renesas |
NPN SILICON EPITAXIAL TRANSISTOR • Low noise o Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. r @f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain P Q1 : |S21e|2 = 9.0 dB TYP. Q2 : |S21e|2 = 12.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA • 6-pin thin-type small mini mold package d • 2 differ |
|
|
|
|
Renesas |
N-CHANNEL MOSFET a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 Features • High Drain to Source Voltage ⎯ VDSS = 20 V (VGS |
|
|
|
|
Renesas |
DUAL N-CHANNEL MOSFET a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 Features • DS MAXIMUM RATINGS 20V(TA = 25°C) • 2.5V drive a |
|
|
|
|
Renesas |
DUAL P-CHANNEL MOSFET a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS0833EJ0101 Rev.1.01 Apr 15, 2013 Features • –1.8V drive available • Low on-state resistance |
|
|
|
|
Renesas |
N-channel MOSFET • VDSS = 30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 1.3 mΩ MAX. (VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 2.9 mΩ MAX. (VGS = 4.5 V, ID = 32 A) • 4.5 V Gate-drive available • Thin type surface mount package with heat spreader • Halogen free 8-pi |
|