UPA2762UGR |
Part Number | UPA2762UGR |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | R07DS0011EJ0100 Rev.1.00 Jun 01, 2010 The μ PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features • Low on-state resistance ... |
Features |
• Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 mΩ MAX. (VGS = 4.5 V, ID = 10 A) • Low Ciss: Ciss = 710 pF TYP. (VDS = 15 V, VGS = 0 V) • Small and surface mount package (Power SOP8) • RoHS Compliant Ordering Information Part No. μ PA2762UGR-E1-AT ∗1 μ PA2762UGR-E2-AT ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Package Power SOP8 0.08 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C, All terminals are connected) Item Drain to Source Voltage (VGS = ... |
Document |
UPA2762UGR Data Sheet
PDF 222.60KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA2761UGR |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
2 | UPA2763 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
3 | UPA2764T1A |
Renesas |
N-channel MOSFET | |
4 | UPA2765T1A |
Renesas |
N-channel MOSFET | |
5 | UPA2766T1A |
Renesas |
N-channel MOSFET |