| No. | Partie # | Fabricant | Description | Fiche Technique |
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Renesas |
N-Channel Power MOSFET • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode 2SK3510-S TO-262 2SK3510-ZJ 2SK3510-Z TO-263 TO-220SMDNote Note TO-220SMD package is produced only in |
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Renesas |
MOS FIELD EFFECT TRANSISTOR • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode 2SK3511-ZJ 2SK3511-Z Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RAT |
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Renesas |
MOSFET • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode 2SK3511-ZJ 2SK3511-Z Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RAT |
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Renesas |
N-Channel Power MOSFET • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode 2SK3510-S TO-262 2SK3510-ZJ 2SK3510-Z TO-263 TO-220SMDNote Note TO-220SMD package is produced only in |
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