| No. | Partie # | Fabricant | Description | Fiche Technique |
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ROUM |
5A 600V N-channel Enhancement Mode Power MOSFET ● Fast Switching ● Low ON Resistance(Rdson≤1.7Ω) ● Low Gate Charge(Typical:19.5nC) ● Low Reverse Transfer Capacitances(Typical:7.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● used in various power switching circuit |
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ROUM |
5A 600V N-channel Enhancement Mode Power MOSFET ● Fast Switching ● Low ON Resistance(Rdson≤1.7Ω) ● Low Gate Charge(Typical:19.5nC) ● Low Reverse Transfer Capacitances(Typical:7.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● used in various power switching circuit |
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ROUM |
5A 600V N-channel Enhancement Mode Power MOSFET ● Fast Switching ● Low ON Resistance(Rdson≤1.7Ω) ● Low Gate Charge(Typical:19.5nC) ● Low Reverse Transfer Capacitances(Typical:7.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● used in various power switching circuit |
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|
ROUM |
5A 600V N-channel Enhancement Mode Power MOSFET ● Fast Switching ● Low ON Resistance(Rdson≤1.7Ω) ● Low Gate Charge(Typical:19.5nC) ● Low Reverse Transfer Capacitances(Typical:7.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● used in various power switching circuit |
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|
|
ROUM |
5A 600V N-channel Enhancement Mode Power MOSFET ● Fast Switching ● Low ON Resistance(Rdson≤1.7Ω) ● Low Gate Charge(Typical:19.5nC) ● Low Reverse Transfer Capacitances(Typical:7.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● used in various power switching circuit |
|
|
|
|
ROUM |
5A 600V N-channel Enhancement Mode Power MOSFET ● Fast Switching ● Low ON Resistance(Rdson≤1.7Ω) ● Low Gate Charge(Typical:19.5nC) ● Low Reverse Transfer Capacitances(Typical:7.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● used in various power switching circuit |
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