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F5N60 |
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| Part Number | F5N60 |
| Manufacturer | ROUM |
| Description | These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords wi... |
| Features |
● Fast Switching ● Low ON Resistance(Rdson≤1.7Ω) ● Low Gate Charge(Typical:19.5nC) ● Low Reverse Transfer Capacitances(Typical:7.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor. TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 5N60/I5N60/E5N60 /B5N60/D5N60 Drian-Source Voltage VDS 600 Gate-Drain Voltage ... |
| Document |
 F5N60 Data Sheet
PDF 1.41MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F5N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 2 | F5N50K-TC |
UTC |
N-CHANNEL MOSFET |
|
| 3 | F5-75R06KE3_B5 |
Infineon |
IGBT |
|
| 4 | F5001 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|
| 5 | F5001H |
Fuji Electric |
INTELIGENT POWER SWITCH |
|