I5N60 ROUM 5A 600V N-channel Enhancement Mode Power MOSFET Datasheet, en stock, prix

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I5N60

ROUM
I5N60
I5N60 I5N60
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Part Number I5N60
Manufacturer ROUM
Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords wi...
Features
● Fast Switching
● Low ON Resistance(Rdson≤1.7Ω)
● Low Gate Charge(Typical:19.5nC)
● Low Reverse Transfer Capacitances(Typical:7.5pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test 3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor. TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 5N60/I5N60/E5N60 /B5N60/D5N60 Drian-Source Voltage VDS 600 Gate-Drain Voltage ...

Document Datasheet I5N60 Data Sheet
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