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SavantIC |
SILICON POWER TRANSISTOR lector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ;RBE=: IC=1mA ;IE=0 IE=1mA ;IC=0 IC=2A; IB=0.2A IC=0 |
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SavantIC |
SILICON POWER TRANSISTOR uration voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA , IB=0 IC=50µA , IE=0 IE=50µA , IC=0 IC=2A ;IB=0.2A IC=2A ;IB=0.2A VCB=40V IE= |
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Inchange Semiconductor Company |
Silicon NPN Power Transistor ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff |
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SavantIC |
SILICON POWER TRANSISTOR ration voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Turn-on time Storage time Fall time IC=2A; IB1=-IB2=0.2A RL=5.0?;VCC@10V CONDITIONS IC=2.0A ;IB=0.2A IC=2.0A ;IB=0.2A VCB=50V; IE=0 VEB=7 |
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NEC |
NPN SILICON DARLINGTON POWER TRANSISTOR |
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SavantIC |
SILICON POWER TRANSISTOR CS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut |
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SavantIC |
SILICON POWER TRANSISTOR 2SD1275 2SD1275A VCB=60V; IE=0 CONDITIONS www.datasheet4u.com 2SD1275 2SD1275A SYMBOL MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 2.5 2.8 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage |
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SavantIC |
SILICON POWER TRANSISTOR t-off current Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=100mA;IB=0 IC=4A;IB=0.8 A IC=4A;IB=0.8 A VEB=4V; IC=0 VCB=800V; IE=0 VCE=1500V; RBE=0 IC=0.5 A ; VCE=5V 10 MIN 800 5.0 1.5 0.1 10 1.0 40 TYP. MAX UNIT V V |
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Panasonic Semiconductor |
Silicon NPN triple diffusion planar Power Transistor q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic e |
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Inchange Semiconductor |
Silicon NPN Power Transistor CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 70V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gai |
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SavantIC |
SILICON POWER TRANSISTOR llector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Diode forward voltage CONDITIONS IC=100mA; RBE=; IC=5mA; IE=0 IE=200mA; IC=0 IC=4A; IB=0.8A IC=4 |
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SavantIC |
SILICON POWER TRANSISTOR ent DC current gain Transition freuqency Output capacitance Fall time CONDITIONS IC=5A; IB=1A IC=5A; IB=1A VCB=500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1.0MHz IC=5A;IB1=1A 8 MIN www.datasheet4u.com 2SD1432 SYMBOL VC |
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SavantIC |
SILICON POWER TRANSISTOR ge Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Storage time IC=2A IBend=0.75A,LLeak=5µH Fall time Diode forward voltage IF=-4A,IB=0 CONDITIONS IE=500mA; IC=0 IC=2A; IB=0.75A IC=2A; IB=0.75A VCB= |
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SavantIC |
SILICON POWER TRANSISTOR or-emitter saturation voltage IC=2A ;IB=0.75A 5.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.75A 1.5 V VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 50 µA 1 mA hFE DC current gain IC=2A ; VCE=10V 4 12 VF |
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SavantIC |
SILICON POWER TRANSISTOR itter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=0.1A , IB=0 IC=4A ;IB=0.8A IC=4A; IB=0.8A VCB=800V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz 8 MIN 600 www.datasheet |
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SavantIC |
SILICON POWER TRANSISTOR VCEsat VBEsat ICBO IEBO hFE fT COB Collector-emitter breakdown voltage IC=1mA ;IB=0 IE=50µA ;IC=0 IC=50µA ;IE=0 IC=1.0A ;IB=0.1A IC=1.0A ;IB=0.1A VCB=120V; IE=0 VEB=4V; IC=0 IC=0.1A ; VCE=5V IC=0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz 160 V Emitter-b |
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SavantIC |
SILICON POWER TRANSISTOR turation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ; IB=0 IC=2A; IB=2mA IC=2A; IB=2mA VCB=100V ;IE=0 VEB=7V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V 2000 50 |
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SavantIC |
SILICON POWER TRANSISTOR C=3A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=1A 1.5 V VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 50 µA 1 mA hFE DC current gain IC=3A ; VCE=10V 5 15 VF Diode forward voltage IC=-4A 2.2 V |
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SavantIC |
SILICON POWER TRANSISTOR tor-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=8 IC=1mA ;IE=0 IE=1mA ;IC=0 I |
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SavantIC |
SILICON POWER TRANSISTOR -off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ;RBE=8 IC=5mA ;IE=0 IE=5mA ;IC=0 IC=4A ;IB=0.4A IC=1A;VCE=5V VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=3A ; VC |
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