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2SD110 |
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| Part Number | 2SD110 |
| Manufacturer | Inchange Semiconductor Company |
| Description | ·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power a... |
| Features |
∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC=0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 10V
COB
Output Capacitance
IE= 0 ; VCB= 50V; f= 1MHz
hFE-2 Classifications R O Y 30-90 50-150 100-300 2SD110 MIN TYP. MAX UNIT 110 V 10 V 1.5 V 2.5 V 0.5 mA 10 mA 30 ... |
| Document |
 2SD110 Data Sheet
PDF 213.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1101 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SD1101 |
Guangdong Kexin Industrial |
Silicon NPN Transistor |
|
| 3 | 2SD1101 |
Renesas |
Silicon NPN Transistor |
|
| 4 | 2SD1105 |
Inchange Semiconductor Company |
Silicon NPN Power Transistor |
|
| 5 | 2SD111 |
INCHANGE |
Silicon NPN Power Transistor |
|