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2SD180 |
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| Part Number | 2SD180 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device pe... |
| Features |
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 70V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 3A; VCE=2V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V
2SD180
MIN TYP. MAX UNIT
1.5
V
1.5
V
0.1
mA
0.5
mA
30
180
150
pF
10
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information con... |
| Document |
 2SD180 Data Sheet
PDF 209.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1800 |
Sanyo Semicon Device |
NPN Epitaxial Silicon Transistor |
|
| 2 | 2SD1801 |
ON Semiconductor |
Bipolar Transistor |
|
| 3 | 2SD1801 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 2SD1801 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SD1802 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|