Panasonic Semiconductor XN1 fiche technique

No.	Partie #	Fabricant	Description
1	XN1212	Panasonic Semiconductor	Silicon NPN epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1212 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 160 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA Coll
2	XN111H	Panasonic Semiconductor	Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN111H Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=1
3	XN1215	Panasonic Semiconductor	Silicon NPN epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1215 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 160 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE — I
4	XN1110	Panasonic Semiconductor	Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1110 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 h
5	XN1111	Panasonic Semiconductor	Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1111 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –160 –140 IB= –1.0mA Ta=25˚C –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(s
6	XN1112	Panasonic Semiconductor	Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1112 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –160 –140 Ta=25˚C IB= –1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –80 –60 –40 –20 0 0 –2 –4 –6 –
7	XN1113	Panasonic Semiconductor	Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1113 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –160 IB= –1.0mA –140 VCE(sat) — IC –100 hFE — IC IC/IB=10 400 VCE= –10V Ta=25˚C Collector
8	XN1114	Panasonic Semiconductor	Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1114 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=1
9	XN1115	Panasonic Semiconductor	Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1115 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=1
10	XN1116	Panasonic Semiconductor	Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1116 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –160 VCE(sat) — IC –100 hFE — IC IC/IB=10 400 VCE= –10V Collector current IC (mA) –0.9mA
11	XN1117	Panasonic Semiconductor	Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1117 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=1
12	XN1118	Panasonic Semiconductor	Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1118 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –240 VCE(sat) — IC –100 hFE — IC IC/IB=10 160 VCE= –10V Collector to emitter saturation vo
13	XN1119	Panasonic Semiconductor	Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1119 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=1
14	XN111F	Panasonic Semiconductor	Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN111F Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=1
15	XN111M	Panasonic Semiconductor	PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN111M Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 240 –10 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10
16	XN1211	Panasonic Semiconductor	Silicon NPN epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1211 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 160 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10
17	XN1213	Panasonic Semiconductor	Silicon NPN epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1213 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 160 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 Ta=2
18	XN1214	Panasonic Semiconductor	Silicon NPN epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1214 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 160 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10
19	XN1216	Panasonic Semiconductor	Silicon NPN epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1216 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 160 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.0mA Collector to emi
20	XN1A311	Panasonic Semiconductor	Composite Transistors • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 3 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 0.30+0.10