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XN111M |
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| Part Number | XN111M |
| Manufacturer | Panasonic Semiconductor |
| Description | Composite Transistors XN111M PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements inco... |
| Features |
1
Composite Transistors
PT — Ta
500
XN111M
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (˚C)
IC — VCE
240 –10 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 500 hFE — IC VCE= –10V –3 –1 –0.3 –0.1 –0.03 –0.01 25˚C Ta=75˚C 200 Forward current transfer ratio hFE Collector current IC (mA) 160 IB= –1.0mA –0.9mA –0.8mA –0.7mA –0.6mA 400 300 120 200 Ta=75˚C 25˚C –25˚C 80 –0.5mA –0.4mA –0.3mA –25˚C 40 100 –0.2mA –0.1mA –0.003 –0.001 –1 0 0 –2 –4 –6 –8 –10 –12 –3 –10 –30 –100 –300 –1000 ... |
| Document |
 XN111M Data Sheet
PDF 34.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | XN1110 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|
| 2 | XN1111 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|
| 3 | XN1112 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|
| 4 | XN1113 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|
| 5 | XN1114 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|