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XN111F |
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| Part Number | XN111F |
| Manufacturer | Panasonic Semiconductor |
| Description | Composite Transistors XN111F Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two eleme... |
| Features |
1
Composite Transistors
PT — Ta
500
XN111F
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (˚C)
IC — VCE
–240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE= –10V –200 Collector current IC (mA) –160 IB= –1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 Forward current transfer ratio hFE 120 Ta=75˚C 25˚C 80 –25˚C –120 –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 –2 –4 –6 –8 –10 –12 40 –25˚C 0 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –1... |
| Document |
 XN111F Data Sheet
PDF 34.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | XN1110 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|
| 2 | XN1111 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|
| 3 | XN1112 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|
| 4 | XN1113 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|
| 5 | XN1114 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|