| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
80V N-Channel MOSFET • • • • • • • 49.8A, 80V, RDS(on) = 0.034Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! ! " " " G DS TO-3 |
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Fairchild Semiconductor |
N-Channel MOSFET • • • • • • • 77.5A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating TM These N-Channel enhanceme |
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AMI SEMICONDUCTOR |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM • Dual voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.4 to 2.2 Volts • Very low standby current 0.5µA at 1.8V and 37 deg C • Very low operating current 1.0mA at 1.8V and 1µs (Typical) • Very low Page Mode operating current 0.5mA at |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 2.85 mΩ (Typ.) @ VGS = 10 V, ID = 50 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Com |
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Fairchild Semiconductor |
80V N-Channel MOSFET • • • • • • • 56A, 80V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 84 nC) Low Crss ( typical 200 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G D S ! " " " TO-3P |
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Panasonic Semiconductor |
3-pin Positive Output Voltage Regulator • No external components • Output voltage : 4V, 5V, 6V, 7V, 8V, 9V, 10V, 12V, 15V, 18V, 20V, 24V • Short-circuit current limiting built-in • Thermal overload protection built-in • Output transistor safe area compensation 0.75±0.25 4.6 0.5±0.25 1.44 |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET • RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 112 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested |
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ON Semiconductor |
N-Channel Power MOSFET • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fre e and are RoHS Compliant Applicatio |
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Fairchild Semiconductor |
80V N-Channel MOSFET • • • • • • • 16.5A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-2 |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(T |
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ON Semiconductor |
N-Channel Power MOSFET • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are |
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Sirectifier Semiconductors |
Single Phase Bridge Rectifiers Modules * Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop APPLICATIONS * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power sup |
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ON Semiconductor |
N-Channel MOSFET • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = |
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ON Semiconductor |
N-Channel Power MOSFET • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applica |
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ON Semiconductor |
N-Channel Power MOSFET • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous Rectificat |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel，10V Logic Level Control Enhancement mode Very low on-resistance Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSD018N08HS 80V/53A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 80 V |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel，10V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avalanche test Pb-free lead plating; RoHS compliant VS80N08AT 80V/83A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V ID 80 V 6 |
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Fairchild Semiconductor |
80V N-Channel MOSFET • 90 A, 80 V, RDS(on) = 16 mΩ (Max) @VGS = 10 V, ID = 45 A • Low Gate Charge (Typ. 84 nC) • Low Crss (Typ. 200 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D G D S TO-3PN G S Absolute Maximum Ratings TC = 25°C unless o |
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Fairchild Semiconductor |
N-Channel MOSFET • • • • • • 75A, 75V, RDS(on) = 0.011Ω @VGS = 10 V Low gate charge ( typical 64 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transist |
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Fairchild Semiconductor |
FDP75N08 • • • • • • 75A, 75V, RDS(on) = 0.011Ω @VGS = 10 V Low gate charge ( typical 150 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transis |
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