FQAF90N08 |
Part Number | FQAF90N08 |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • • 56A, 80V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 84 nC) Low Crss ( typical 200 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQAF90N08 80 56 39.6 224 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V ... |
Document |
FQAF90N08 Data Sheet
PDF 673.56KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQAF9N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
2 | FQAF9N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
3 | FQAF9P25 |
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4 | FQAF10N80 |
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800V N-Channel MOSFET | |
5 | FQAF11N40 |
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400V N-Channel MOSFET |