FQA90N08 |
Part Number | FQA90N08 |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
Features |
• 90 A, 80 V, RDS(on) = 16 mΩ (Max) @VGS = 10 V, ID = 45 A • Low Gate Charge (Typ. 84 nC) • Low Crss (Typ. 200 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D G D S TO-3PN G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode ... |
Document |
FQA90N08 Data Sheet
PDF 2.30MB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQA90N08 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | FQA90N15 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
3 | FQA90N15-F109 |
ON Semiconductor |
N-Channel MOSFET | |
4 | FQA90N15_F109 |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FQA9N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |