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ON Semiconductor MG2 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
FMG22R

Thinki Semiconductor
10.0 Ampere Dual Unipolar/Common Anode Polarity Ultrafast Recovery Diode
Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Environment(Inverter/Converter) Plating Power Supply,UPS and Adaptor Car Audio Ampli
Datasheet
2
FMG23R

Thinki Semiconductor
10.0 Ampere Dual Unipolar/Common Anode Polarity Ultrafast Recovery Diode
Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Environment(Inverter/Converter) Plating Power Supply,UPS and Adaptor Car Audio Ampli
Datasheet
3
FMG22R

Thinki Semiconductor
10.0 Ampere Dual Unipolar/Common Anode Polarity Ultrafast Recovery Diode
Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Environment(Inverter/Converter) Plating Power Supply,UPS and Adaptor Car Audio Ampli
Datasheet
4
FMG2G300US60

Fairchild Semiconductor
IGBT

• Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 300A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
• UL Certified No.E209204 Application
• AC & DC Motor Control
Datasheet
5
MG200Q2YS65H

Toshiba Semiconductor
IGBT Module Silicon N Channel IGBT
ime Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Turn-on Switching loss Turn-off Eoff Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf t
Datasheet
6
MMG20271H9T1

Freescale Semiconductor
pHEMT

 Frequency: 1500--2700 MHz
 Noise Figure: 1.7 dB @ 2140 MHz
 P1dB: 27.5 dBm @ 2140 MHz
 Small--Signal Gain: 16 dB @ 2140 MHz
 Third Order Output Intercept Point: 43.1 dBm @ 2140 MHz
 Class 2 HBM ESD Immunity
 Single 5 V Supply
 Supply Current
Datasheet
7
FMG22S

Thinki Semiconductor
10.0 Ampere Dual Unipolar/Common Cathode Polarity Ultrafast Recovery Diode
Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Environment(Inverter/Converter) Plating Power Supply,UPS and Adaptor Car Audio Amplif
Datasheet
8
FMG21S

Thinki Semiconductor
Ultra Fast Recovery Half Bridge Rectifier
Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers
Datasheet
9
FMG22S

Thinki Semiconductor
Ultra Fast Recovery Half Bridge Rectifier
Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers
Datasheet
10
FMG26S

Thinki Semiconductor
Ultra Fast Recovery Half Bridge Rectifier
Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers
Datasheet
11
FMG24R

Thinki Semiconductor
10.0 Ampere Dual Unipolar/Common Anode Polarity Ultrafast Recovery Diode
Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Environment(Inverter/Converter) Plating Power Supply,UPS and Adaptor Car Audio Ampli
Datasheet
12
FMG23R

Thinki Semiconductor
10.0 Ampere Dual Unipolar/Common Anode Polarity Ultrafast Recovery Diode
Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Environment(Inverter/Converter) Plating Power Supply,UPS and Adaptor Car Audio Ampli
Datasheet
13
FMG2G50US120

Fairchild Semiconductor
IGBT

• Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.6 V @ IC = 50A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
• UL Certified No.E209204 Application
• AC & DC Motor Control
Datasheet
14
FMG2G100US60

Fairchild Semiconductor
Molding Type Module






• UL Certified No. E209204 Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 100A High Input Impedance Fast & Soft Anti-Parallel FWD Package Code : 7PM-GA E1/C2 Applica
Datasheet
15
EMG5DXV5T1

ON Semiconductor
(EMG2DXV5T1 / EMG5DXV5T1) Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors
http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTORS (3) R1 R2 DTr2 (2) R2 (1) R1 DTr1






• Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 Available in 8 mm, 7 inch Tape and Reel
Datasheet
16
MMG2001T1

Freescale Semiconductor
Gallium Arsenide CATV Integrated Amplifier

• Specified for 79 -, 112 - and 132 -Channel Loading
• Excellent Distortion Performance
• Higher Output Capability
• Built-in Input Diode Protection
• GaAs FET Transistor Technology
• Unconditionally Stable Under All Load Conditions
• In Tape and Ree
Datasheet
17
MG200J6ES61

Powerex Power Semiconductors
Compact IGBT Series Module
£ Integrated Thermistor £ Low VCE(sat) £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete part n
Datasheet
18
MG200Q2YS60A

Toshiba Semiconductor
High Power Switching Applications Motor Control Applications
nal Terminal Layout 7 5 8 2.54 25.4 ± 0.6 6 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 3 1 4 2.54 2 2.54 Weight: 375 g 2 2001-08-28 62 1.0 MG200Q2YS60A Maximum Ratings (Ta = 25°C) Stage Characteristics Collector-emitter v
Datasheet
19
MG200H1FL1A

Toshiba Semiconductor
IGBT
Datasheet
20
FMG24R

Thinki Semiconductor
10.0 Ampere Dual Unipolar/Common Anode Polarity Ultrafast Recovery Diode
Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Environment(Inverter/Converter) Plating Power Supply,UPS and Adaptor Car Audio Ampli
Datasheet



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