| No. | Partie # | Fabricant | Description | Fiche Technique |
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Alpha & Omega Semiconductors |
N-Channel MOSFET The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.5 mΩ (V |
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Fairchild Semiconductor |
360V PDP IGBT • • • • • High Current Capability Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 50 A High Input Impedance Fast Switching RoHS Compliant General Description Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optim |
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ON Semiconductor |
IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 50 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • PDP TV, Consumer Appliances General Description Using novel trench IGBT technology, ON Semicond |
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Alpha & Omega Semiconductors |
N-Channel MOSFET VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.5 mΩ (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate |
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ON Semiconductor |
MJD45H11 • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Electrically Similar to Popular D44H/D45H Series • Low Collector Emitter Saturation Voltage • Fast Switching Speeds |
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Alpha & Omega Semiconductors |
200V N-Channel MOSFET on-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC G S Maximum 200 ±20 6 4.5 10 1.5 1 3 18 42.5 21 2.5 1.6 -55 to 175 Typ Max 15 20 41 50 2.9 3.5 Units V V A A A mJ W W °C Units °C/W °C/W °C/W |
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Inchange Semiconductor |
Silicon PNP Power Transistors n to Case 1.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45VH Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spec |
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Alpha & Omega Semiconductors |
14A N-Channel MOSFET IAR EAR EAS Peak diode recovery dv/dt dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL G Maximum 250 ±30 14 1 |
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Fairchild Semiconductor |
Dual Operational Amplifier • No frequency compensation required. • No latch up. • Large common mode and differential voltage range. • Parameter tracking over temperature range. • Gain and phase match between amplifiers. • Internally frequency compensated. • Low noise input tra |
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National Semiconductor |
BCD-to-7 Segment Latch/Decoder/Driver Y Y Y Y Y Y Y Y Y Low logic circuit power dissipation High current sourcing outputs (up to 25 mA) Latch storage of code Blanking input Lamp test provision Readout blanking on all illegal input combinations Lamp intensity modulation capability Time s |
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National Semiconductor |
Dual Precision Monostable Y Y Y Y Y Y Y Y Y Y Wide supply voltage range 3 0V to 15V High noise immunity 0 45 VCC (typ ) Low power Fan out of 2 driving 74L TTL compatibility or 1 driving 74LS New formula PWOUT e RC (PW in seconds R in Ohms C in Farads) g 1 0% pulse-width v |
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Inchange Semiconductor |
2SD458 fied SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A VBE(sat) Base-Emitter Saturatio |
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Inchange Semiconductor |
Silicon PNP Power Transistors n to Case 1.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45VH Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spec |
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Inchange Semiconductor |
Silicon NPN Power Transistor BOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 hFE1 DC Current Gain IC= 2A; VCE= 5V hFE2 |
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Alpha & Omega Semiconductors |
N-Channel MOSFET VDS (V) = 200V ID = 3.8A RDS(ON) <0.7Ω (VGS = 10V) 193 18 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Cu |
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National Semiconductor |
BCD-to-7 Segment Latch/Decoder/Driver Y Y Y Y Y Y Y Y Y Low logic circuit power dissipation High current sourcing outputs (up to 25 mA) Latch storage of code Blanking input Lamp test provision Readout blanking on all illegal input combinations Lamp intensity modulation capability Time s |
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National Semiconductor |
BCD-to-7 Segment Latch/Decoder/Driver Y Y Y Y Y Y Y Y Y Low logic circuit power dissipation High current sourcing outputs (up to 25 mA) Latch storage of code Blanking input Lamp test provision Readout blanking on all illegal input combinations Lamp intensity modulation capability Time s |
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Mospec Semiconductor |
Power Transistors |
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Boca Semiconductor Corporation |
Complementary Silicon Power Transistors |
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Fairchild Semiconductor |
N-Channel Logic Level PWM Optimized Power MOSFET low gate charge while maintaining low onresistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.0 |
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