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D458 |
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| Part Number | D458 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ APPLICATIONS ·Designed for high power amplifier and switching applications. ABSOLUTE MAXIMU... |
| Features |
fied
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 1A
ICER Collector Cutoff Current
VCE= 600V; RBE= 50Ω
hFE DC Current Gain
IC= 5A; VCE= 5V
MIN TYP. MAX UNIT 400 V
5V 1.5 V 3.0 V 1.0 mA
6.5 50
hFE Classifications QR
15-50
6.5-30
www.DataSheet.co.kr
isc Website：www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
... |
| Document |
 D458 Data Sheet
PDF 109.27KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | D4503B |
ETC |
Hex 2 State Buffer |
|
| 2 | D45128163G5 |
NEC |
UPD45128163G5 |
|
| 3 | D45128441G5 |
NEC |
UPD45128441G5 |
|
| 4 | D45128841G5 |
NEC |
UPD45128841G5 |
|
| 5 | D4515 |
JILIN SINO |
Low-frequency amplification shell rated bipolar transistors |
|