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3DD4515 |
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| Part Number | 3DD4515 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC=10A ·Minimum Lot-to-Lot variations for robust device performance and reliab... |
| Features |
BOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
hFE1
DC Current Gain
IC= 2A; VCE= 5V
hFE2
DC Current Gain
IC= 5A; VCE= 5V
hFE3
DC Current Gain
IC= 10A; VCE= 5V
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
VBE(sat) Base -Emitter Saturation Voltage
IC= 10A; IB= 2A
tf
Fall Time
VCC=24V,IC=6A,IB1=-I B2=1.2A
tstg
Storage Time
VCC=24V,IC=6A,IB1=-I B2=1.2A
fT
Current-Gain—Bandwidth Product
IE= -0.5A ; VCE= 10V... |
| Document |
 3DD4515 Data Sheet
PDF 214.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD4513A1D |
Huajing Microelectronics |
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| 2 | 3DD4513A6D |
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| 3 | 3DD4515 |
JILIN SINO |
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| 4 | 3DD4515A1 |
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| 5 | 3DD4515A3 |
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