| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor aracteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 240 1.5 0.1 10 10 4.5 5.3 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold v |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 100 1.5 0.1 2 1 1 3.5 5 2 1 60 10 10 V VGS = 0 V, ID = 0.25 mA, Tj = |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor JA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 65 2 0. |
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ON Semiconductor |
N-Channel Logic Level Enhancement Mode Field Effect Transistor • 0.17 A, 100 V ♦ RDS(on) = 6 W @ VGS = 10 V ♦ RDS(on) = 10 W @ VGS = 4.5 V • High Density Cell Design for Extremely Low RDS(on) • Rugged and Reliable • Compact Industry Standard SOT−23 Surface Mount Package • This Device is Pb−Free and Halogen Free |
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ON Semiconductor |
N-Channel Logic Level Enhancement Mode Field Effect Transistor • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra−Small Surface Mount Package • Green Compound • ESD HBM = 2000 V as per JEDEC A114A; ESD CDM = 2000 V as per JEDEC C101C |
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Fairchild Semiconductor |
N-Channel MOSFET 0.22 A, 50V. RDS(ON) = 3.5Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). Rugged and Relaible Compact industry standard SOT-23 surface mount package. _______________________________________________________________________________ |
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ON Semiconductor |
Surface Mount Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • Compact Package with J−Bend Leads Ideal |
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Siemens Semiconductor |
SIPMOS Small-Signal Transistor istics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 240 1.4 0.1 2 1 12 15 2 1 60 30 10 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold vo |
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Dynex Semiconductor |
Single Switch IGBT Module I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 600A 1200A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS |
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Fairchild Semiconductor |
N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage D • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Pb Free / RoHS Compliant G SOT - 23 Marking : SK S • Green Compound • ESD HBM |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor / 150 / 56 Unit °C K/W Tj Tstg RthJA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Val |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor fied. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 200 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage cu |
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Siemens Semiconductor Group |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) rical Characteristics at TA = 25 ˚C, unless otherwise specified. Values Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage1) IC = 100 µA Emitter-base breakdown voltage IE = 10 µA C |
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Siemens Semiconductor Group |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) .91 BSS 79 BSS 81 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 79 BSS 81 Collector-base breakdown voltage IC = 10 µA Emitter-base b |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -50 -1.5 |
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ON Semiconductor |
N-Channel MOSFET • 0.22 A, 50 V ♦ RDS(on) = 3.5 W @ VGS = 10 V ♦ RDS(on) = 6.0 W @ VGS = 4.5 V • High Density Cell Design for Extremely Low RDS(on) • Rugged and Reliable • Compact Industry Standard SOT−23 Surface Mount Package • HBM Class 0A, MM Class M2 (Note 3) • T |
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NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET ● VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating：HBM 2300V Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Direct logic-level interf |
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Siemens Semiconductor |
SIPMOS Small-Signal Transistor s, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 1.4 0.1 8 10 0.95 1.1 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold v |
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NXP Semiconductors |
MOSFET and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol |
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ON Semiconductor |
P-Channel Power MOSFET damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case the |
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