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BSS138 |
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| Part Number | BSS138 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resista... |
| Features |
0.22 A, 50V. RDS(ON) = 3.5Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). Rugged and Relaible Compact industry standard SOT-23 surface mount package.
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D
G
S
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage
T A = 25°C unless otherwise noted
BSS138 50 50 ± 20 ± 40 0.22 0.88 0.36 2.8 -55 to 150 300
Units V V V
Drain-Gate Voltage (RGS < 20KΩ) Gate-Source Voltage - Continuous - Non Repetitive (TP < 50 µS)
ID PD TJ,TSTG TL
Drain Current - Continuous - Pulsed Maxim... |
| Document |
 BSS138 Data Sheet
PDF 95.73KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSS131 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor |
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| 2 | BSS131 |
Infineon Technologies AG |
SIPMOS Small Signal Transistor |
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| 3 | BSS131 |
INFINEON |
SIPMOS Small-Signal-Transistor |
|
| 4 | BSS131 |
Siemens Semiconductor |
SIPMOS Small-Signal Transistor |
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| 5 | BSS135 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor |
|