BSS138 |
Part Number | BSS138 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance... |
Features |
• 0.22 A, 50 V ♦ RDS(on) = 3.5 W @ VGS = 10 V ♦ RDS(on) = 6.0 W @ VGS = 4.5 V • High Density Cell Design for Extremely Low RDS(on) • Rugged and Reliable • Compact Industry Standard SOT−23 Surface Mount Package • HBM Class 0A, MM Class M2 (Note 3) • This Device is Pb−Free and Halogen Free DATA SHEET www.onsemi.com D G S SOT−23−3 CASE 318−08 MARKING DIAGRAM 3 Drain SSMG G 1 Gate 2 Source SS = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERIN... |
Document |
BSS138 Data Sheet
PDF 242.05KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSS131 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor | |
2 | BSS131 |
Infineon Technologies AG |
SIPMOS Small Signal Transistor | |
3 | BSS131 |
INFINEON |
SIPMOS Small-Signal-Transistor | |
4 | BSS131 |
Siemens Semiconductor |
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5 | BSS135 |
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