| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) b 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection. Semiconductor Group 1 09.96 BSP 129 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown v |
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Siemens Semiconductor Group |
Smart Lowside Power Switch • Logic Level Input • Input protection (ESD) • Thermal shutdown (with restart) • Overload protection • Short circuit protection • Overvoltage protection • Current limitation Product Summary Continuous drain source voltage On-state resistance Current |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor g RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown vo |
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Siemens Semiconductor Group |
IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current) |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) g RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown vo |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor ... + 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol |
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Siemens Semiconductor Group |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage1) IC = 10 mA, RBE = 150 Ω BSP 60 BSP 61 BSP 62 Collector-base breakdown voltage IC = 100 µA, IB = 0 BSP 60 BSP 61 |
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Siemens Semiconductor Group |
Smart Lowside Power Switch • Logic Level Input • Input Protection (ESD) • Thermal shutdown with auto restart • Overload protection • Short circuit protection • Overvoltage protection • Current limitation Product Summary Drain source voltage V DS 40 50 3 500 V mΩ A mJ On-st |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor JA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage |
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Micronas Semiconductor |
Baseband Siund Processor |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- sour |
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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors ector current – Koll.-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temp. – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25/C) Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB |
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Siemens Semiconductor Group |
High-side switch Short-circuit protection Overtemperature protection rse load current only limited by connected load. BSP 350 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection Semiconductor Group 1 04.97 BSP 350 Electrical Characteristics Parameter and Conditions at Tj = 25 °C, Vbb = 13 |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor A RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage |
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ON Semiconductor |
High Voltage Transistors •ăPb-Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Collector‐Emitter Voltage Collector‐Base Voltage Emitter‐Base Voltage Collector Current Total Device Dissipation @ TA = 25°C (Note 1) VCEO VCBO VEBO IC PD -300 -350 -6.0 - |
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ON Semiconductor |
(BSP52T1 / BSP52T3) NPN Small-Signal Darlington Transistor http://onsemi.com • The SOT-223 Package can be soldered using wave or reflow. The • • • formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BSP52T1 to order the 7 |
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Fairchild Semiconductor |
NPN Darlington Transistor sat) Parameter Test Conditions IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCE = 45V, VBE = 0 VEB = 4.0V, IC = 0 IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 500mA, IB = 0.5mA IC = 500mA, IB = 0.5mA 1000 2000 1.3 1.9 V V Min. 60 5 50 50 Typ. Max. Units |
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Zetex Semiconductors |
(BSP40 / BSP42) SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS CM IC IB Ptot Tj:Tstg MAX. UNIT V V V V V µA BSP40 70 60 5 2 1 100 2 BSP42 90 80 UNIT V V V A A mA W °C -55 to +150 CONDITIONS. IC=100µA IC=100µA IC=10mA IC=10mA IE=10µA ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). nA V |
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ON Semiconductor |
NPN Small-Signal Darlington Transistor • The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Available in 12 mm Tape and Reel Use BSP52T1 to Order the 7 Inch/1000 Unit Reel • |
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