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ON Semiconductor |
N-channel MOSFET • High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability • These are Pb−Free Devices DATA SHEET www.onsemi.com BS170 DGS TO−92 3 4.825x4.76 CASE 135AN D GS TO−92 3 |
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Fairchild Semiconductor |
N-channel MOSFET ■ High density cell design for low RDS(ON). ■ Voltage controlled small signal switch. ■ Rugged and reliable. ■ High saturation current capability. BS170 MMBF170 D D GS TO-92 S SOT-23 G Absolute Maximum Ratings TA = 25°C unless otherwise noted |
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General Semiconductor |
DMOS Transistors ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Spec |
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ON Semiconductor |
Small Signal MOSFET • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current (Note) Total Device Dissipation @ TA = 25°C Operating and Storage Junction Tem |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 60 1.4 0.05 1 2.5 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate volt |
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Dynex Semiconductor |
Bi-directional Switch Igbt Module s s s 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VDRM (typ) VT (max) IC (max) IC(PK) ±1200V 4.3V 200A 400A APPLICATIONS s s s Matrix Converters Brushless Motor Controllers Frequency Converters |
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Fairchild Semiconductor |
Motion SPM 3 module • UL Certified No. E209204 (UL1557) • 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection • Low-Loss, Short-Circuit Rated IGBTs • Low Thermal Resistance Using Ceramic Substrate • Dedicated Vs Pins Simplify PCB Layout • Separa |
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General Semiconductor |
DMOS Transistors (N-Channel) ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown max. ∅ .022 (0.55) .098 (2.5) |
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ON Semiconductor |
Small Signal MOSFET • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current Continuous (Note 1) Pulsed (Note 2) Total |
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Fairchild Semiconductor |
Motion SPM 3 module • UL Certified No. E209204 (UL1557) • 600 V - 10 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection • Low-Loss, Short-Circuit Rated IGBTs • Low Thermal Resistance Using Ceramic Substrate • Dedicated Vs Pins Simplify PCB Layout • Separa |
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Fairchild Semiconductor |
Motion SPM 3 module • UL Certified No. E209204 (UL1557) • 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection • Built-In Thermal Shutdown Function • Low-Loss, Short-Circuit Rated IGBTs • Low Thermal Resistance Using Ceramic Substrate • Dedicated |
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Taiwan Semiconductor |
Glass Passivated Bridge Rectifier - Glass passivated junction - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65 |
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Zetex Semiconductors |
N-channel MOSFET * 60Volt VDS * RDS(ON) = 5Ω BS170F S D PARTMARKING DETAIL – MV G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and |
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General Semiconductor |
DMOS Transistors (N-Channel) ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown max. ∅ .022 (0.55) .098 (2.5) |
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General Semiconductor |
DMOS Transistors ♦ ♦ ♦ ♦ ♦ ♦ High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown max. ∅ .022 (0.55) .098 (2.5) D G S MECHANICAL DATA Case: TO-92 Plastic Package Weight: app |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • • • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 2.0 A 55 V 28 V 55 V 4.0 V 57.5 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 3.0 OC/W O O O DIM A B C D E F G H I J K L I J K L MINIMUM inches / mm |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • • • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 2.0 A 55 V 28 V 55 V 4.0 V 50 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 3.0 OC/W O O O DIM A B C D E F G H I J K L I J K L MINIMUM inches / mm MA |
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Samsung Semiconductor |
DRAM Module • Part Identification Part number KMM372F3200BS1 KMM372F3280BS1 PKG TSOP TSOP Ref. 4K 8K CBR Ref. 4K/64ms ROR Ref. 8K/64ms 4K/64ms • Extended Data Out Mode Operation • CAS-before-RAS Refresh capability • RAS-only and Hidden refresh capability • LVTT |
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Taiwan Semiconductor Company |
(SDB12 - SDB110) Schottky Barrier Rectifiers Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-O Epitaxial construction High temperature sol |
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Taiwan Semiconductor Company |
(SDB12 - SDB110) Schottky Barrier Rectifiers Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-O Epitaxial construction High temperature sol |
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