| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
Positive Voltage Regulator • Output Current in Excess of 1.5 A • Output Adjustable between 1.2 V and 37 V • Internal Thermal Overload Protection • Internal Short Circuit Current Limiting Constant with Temperature • Output Transistor Safe−Area Compensation • Floating Operation |
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Inchange Semiconductor |
Silicon NPN Power Transistor tion to Case isc website：www.iscsemi.com MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD243/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 V |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor 45 60 80 100 0.7 0.7 0.4 0.4 0.4 0.4 1 30 15 1.5 2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 4V |
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Inchange Semiconductor |
Silicon NPN Power Transistor tion to Case isc website：www.iscsemi.com MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD243/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 V |
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Comset Semiconductors |
PNP SILICON POWER TRANSISTORS , A, B, C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICES Ratings Collector- Emitter Cut-off Current VCE VCE VCE VCE Test Condition(s) Min - Typ - Mx -0.4 Unit mA = -55 V , VBE = 0 = -70 V , VBE = 0 = -90 V , VBE = 0 = - |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor 45 60 80 100 0.7 0.7 0.4 0.4 0.4 0.4 1 30 15 1.5 2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 4V |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor n IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 0.7 - 0.7 - 0.4 - 0.4 - 0.4 - 0.4 -1 30 15 - 1.5 -2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = - 30V, IB = 0 VCE = - 60V, IB = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = |
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Inchange Semiconductor |
Silicon PNP Power Transistor , Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdo |
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ON Semiconductor |
Positive Voltage Regulator • Output Current in Excess of 1.5 A • Output Adjustable between 1.2 V and 37 V • Internal Thermal Overload Protection • Internal Short Circuit Current Limiting Constant with Temperature • Output Transistor Safe−Area Compensation • Floating Operation |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor . - 45 - 60 - 80 - 100 - 0.3 - 0.3 - 0.2 - 0.2 - 0.2 - 0.2 -1 40 15 - 0.7 - 1.3 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = - 30V, IB = 0 VCE = - 60V, IB = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = |
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Inchange Semiconductor |
Silicon NPN Power Transistor emark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= |
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Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
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Inchange Semiconductor |
Silicon NPN Power Transistor tion to Case isc website：www.iscsemi.com MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD243/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 V |
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Comset Semiconductor |
PNP transistors |
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ON Semiconductor |
Complementary Silicon Plastic Power Transistors • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Vdc 80 100 Collector−Base Voltage BD243B, BD244 |
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ON Semiconductor |
PNP Power Transistors • High Current Gain − Bandwidth Product • Compact TO−220 AB Package • Epoxy Meets UL94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating ÎÎÎÎÎÎÎÎÎ |
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ON Semiconductor |
NPN High-Power Transistor • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 • Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor 45 60 80 100 0.7 0.7 0.4 0.4 0.4 0.4 1 30 15 1.5 2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 4V |
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Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTORS |
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Siemens Semiconductor Group |
Silicon Switching Diode Array = 10 mA IF = 50 mA IF = 100 mA Reverse current VR = 30 V VR = 50 V AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – |
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