| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SB1375 (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) |
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Panasonic Semiconductor |
2SB976 q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VE |
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Panasonic Semiconductor |
2SB1148 q Low collector to emitter saturation voltage VCE(sat) q High-speed switching q I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Par |
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Inchange Semiconductor |
Silicon PNP Power Transistor se Breakdown Voltage IC= -1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitte |
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Toshiba Semiconductor |
Silicon PNP Transistor dition ICBO VCB = -60 V, IE = 0 IEBO VEB = -7 V, IC = 0 V (BR) CEO IC = -50 mA, IB = 0 hFE (1) (Note) VCE = -5 V, IC = -0.5 A hFE (2) VCE (sat) VBE fT Cob VCE = -5 V, IC = -3 A IC = -3 A, IB = -0.3 A VCE = -5 A, IC = -0.5 A VCE = -5 V, IC = |
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Toshiba Semiconductor |
2SB1640 (sat) VBE fT Cob Test Condition VCB = −60 V, IE = 0 VEB = −7 V, IC = 0 IC = −50 mA, IB = 0 VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −2 A IC = −2 A, IB = −0.2 A VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Min ― ― −60 |
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Hitachi Semiconductor |
2SB647 10 320 — –1 Typ Max Unit Test conditions — — — –10 200 — –1 V V V V µA I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –100 V, IE = 0 VCE = –5 V, I C = –150 mA*2 VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA*2 VCE = –5 |
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Panasonic Semiconductor |
2SB950 q q q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –5 –8 –4 40 2 150 –55 to +150 Unit V 16.7±0.3 φ3.1±0.1 4.0 14.0±0.5 s A |
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Panasonic Semiconductor |
2SB788 q High collector to emitter voltage VCEO. q Low noise voltage NV. q M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to |
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Panasonic Semiconductor |
Silicon PNP triple diffusion planar type Transistor • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) φ 3.16±0.1 3.8±0.3 11.0±0.5 1.9±0.1 ■ Absolute Maximum |
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ON Semiconductor |
Bipolar Transistor • • Adoption of FBET, MBIT processes Large current capacity and wide ASO • Low saturation voltage Specifications ( ): 2SB1143 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Volt |
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Toshiba Semiconductor |
2SB1020A |
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Panasonic Semiconductor |
2SB949 16.7±0.3 7.5±0.2 q High foward current transfer ratio hFE q High-speed switching q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SB949 |
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Panasonic Semiconductor |
2SB621 0.45 –0.1 +0.2 0.45 –0.1 1.27 +0.2 emitter voltage 2SB621A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW ˚C ˚C 1.27 1 2 3 2.3±0.2 2.54±0.15 |
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Panasonic Semiconductor |
2SB1254 3C61-XX LSD3C62-XX LSD3C64-XX LSD3C65-XX LSD3C63-XX GaP λP (nm) Vf(v) @ 20mA Min Max 2.8 2.8 2.8 2.4 2.4 2.8 2.8 2.8 2.8 2.4 Iv(mcd) @ 10mA Min 1.5 2.2 2.5 3.5 2.5 1.5 2.2 2.5 3.5 2.5 PIN NO.1 8.0 (0.315") 11.0 (0.433") 2.0X4= 8.0 (0.315") em |
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Panasonic Semiconductor |
2SB1434 • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 1 2 3 Collector to base voltage Collector to emitte |
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Panasonic Semiconductor |
2SB1030 q Optimum for high-density mounting. q Allowing supply with the radial taping. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to 2SB1030 base voltage 2SB1030A Collector to 2SB1030 emitter voltage 2SB1030A Emitter to base voltage Peak coll |
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Toshiba Semiconductor |
Silicon PNP Transistor (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) |
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Inchange Semiconductor |
Silicon PNP Power Transistor R)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -2.5 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -12 |
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Sanyo Semiconductor |
2SB1203 · Low collector-to-emitter saturation voltage. · High current and high fT. · Excellent linearity of hFE. · Fast switching speed. · Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller. Package Dimensions unit:mm 2045B [ |
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