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2SB688 |
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| Part Number | 2SB688 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SD718 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL... |
| Features |
R)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
-120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A
-2.5
V
VBE(on)
Base-Emitter On Voltage
IC= -5A ; VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -120V ; IE= 0
-10 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-10 μA
hFE
DC Current Gain
IC= -1A ; VCE= -5V
55
160
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1.0MHz
280
pF
fT
Current-Gain—Bandwidth Product
IC=-1A ; VCE= -5V
10
MHz
hFE Classifications R O 55-110 80-160 NOTICE： ISC reserves the rights to make changes o... |
| Document |
 2SB688 Data Sheet
PDF 223.75KB |
| Distributor | Stock | Price | Buy |
|---|
