| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
Small Signal MOSFET • AEC Qualified • PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS Rating Drain Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current − Continuous − Pulsed Total Pow |
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NXP Semiconductors |
N-channel MOSFET |
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ON Semiconductor |
N-Channel MOSFET • High Density Cell Design for Low RDS(on) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability • ESD Protection Level: HBM > 100 V, CDM > 2 kV • This Device is Pb−Free and Halogen Free DATA SHEET www.o |
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NXP Semiconductors |
dual N-channel MOSFET and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick re |
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Fairchild Semiconductor |
N-channel FET • High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability Description These N-channel enhancement mode field effect transistors are produced using Fairchild's propr |
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Taiwan Semiconductor |
TSM2N7000 ● ● Fast Switching Speed Low Input and Output Leakage Block Diagram Application ● ● Direct Logic-Level Interface: TTL/CMOS Solid-State Relays Ordering Information Part No. TSM2N7000CT B0 TSM2N7000CT A3 Package TO-92 TO-92 Packing 1Kpcs / Bulk 2K |
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Fairchild Semiconductor |
N-channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage • Ultra-Small Surface Mount Package • Pb Free / RoHS Compliant • ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114 and ES |
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Taiwan Semiconductor Company |
60V N-Channel Enhancement Mode MOSFET High density cell design for low on-resistance Voltage control small signal switch Rugged and reliable High saturation current capability Provide in TO-92 package Ordering Information Part No. TSM2N7000CT A3 TSM2N7000CT B0 Packing Ammo pac |
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NXP Semiconductors |
N-channel MOSFET and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick re |
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NXP Semiconductors |
single N-channel MOSFET and benefits Very fast switching Trench MOSFET technology ESD protection up to 2 kV Logic-level compatible Ultra thin package profile with 0.37 mm height 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Swit |
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NXP Semiconductors |
N-channel MOSFET and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick re |
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Central Semiconductor |
SILICON N-CHANNEL MOSFET A 60 105 VGS(th) VDS=VGS, ID=250μA 1.0 2.1 VDS(ON) VGS=10V, ID=500mA VDS(ON) VGS=5.0V, ID=50mA VSD VGS=0, IS=11.5mA rDS(ON) VGS=10V, ID=500mA 3.7 rDS(ON) VGS=10V, ID=500mA, TA=100°C rDS(ON) VGS=5.0V, ID=50mA 6.2 rDS(ON) VGS=5.0V |
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ON Semiconductor |
Small-Signal MOSFET • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and |
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Panasonic Semiconductor |
Chip inductors q High Q q Good for mounting q Wide allowable range (1.0 nH to 1000 µH) s Recommended Applications q CTV, VTR, HIC, HDD, FDD, Cordless telephones, Portable telephones Pagers, Video cameras s Explanation of Part Numbers E L J F A 2 2 1 J F |
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NXP Semiconductors |
N-Channel MOSFET s Logic level threshold compatible s Surface-mounted package s Very fast switching s TrenchMOS technology 1.3 Applications s Logic level translator s High-speed line driver 1.4 Quick reference data s VDS ≤ 60 V s RDSon ≤ 2 Ω s ID ≤ 475 mA s Ptot ≤ |
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NXP Semiconductors |
N-Channel MOSFET and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol |
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AiT Semiconductor |
N-CHANNEL MOSFET ESD Protected: 1000V Available in SOT-23 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-23 AM2N7002E3R E3 AM2N7002E3VR Note V: Green Package R : Tape & Reel AiT provides all Pb free products Suffix “ V “ mean |
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ON Semiconductor |
N-channel FET • High Density Cell Design for Low RDS(on) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability • ESD Protection Level: HBM > 100 V, CDM > 2 kV • This Device is Pb−Free and Halogen Free DATA SHEET www.o |
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Silikron Semiconductor |
MOSFET and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ESD Rating：2000V HBM 150℃ op |
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Silikron Semiconductor |
MOSFET and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ESD Rating：1000V HBM 150℃ op |
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