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2N7000G |
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| Part Number | 2N7000G |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | 2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features • AEC Qualified • PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS Rating Drain Source Voltage Drain−Gate Voltage... |
| Features |
• AEC Qualified • PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS Rating Drain Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current − Continuous − Pulsed Total Power Dissipation Derate above 25°C @ TC = 25°C Symbol VDSS VDGR VGS VGSM ID IDM PD Value 60 60 ± 20 ± 40 200 500 350 2.8 Unit Vdc Vdc Vdc Vpk mAdc mW mW/°C Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient Maximum Lead Temperatu... |
| Document |
 2N7000G Data Sheet
PDF 91.76KB |
| Distributor | Stock | Price | Buy |
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