Features
|
A
60
105
VGS(th)
VDS=VGS, ID=250μA
1.0
2.1
VDS(ON)
VGS=10V, ID=500mA
VDS(ON)
VGS=5.0V, ID=50mA
VSD
VGS=0, IS=11.5mA
rDS(ON)
VGS=10V, ID=500mA
3.7
rDS(ON)
VGS=10V, ID=500mA, TA=100°C
rDS(ON)
VGS=5.0V, ID=50mA
6.2
rDS(ON)
VGS=5.0V, ID=50mA, TA=100°C
gFS
VDS=10V, ID=200mA
80
MAX 100 100 1.0 500
2.5 3.75 0.375 1.5 7.5 13.5 7.5 13.5
UNITS V V V mA mA mA mA mA
mW °C °C/W
UNITS nA nA μA μA mA V V V V V Ω Ω Ω Ω mS
R6 (9-February 2015)
2N7002
SURFACE MOUNT SILICON N-CHANNEL
ENHANCEMENT-MODE MOSFET
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SY...
|